In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 6 ( 2006-11-01), p. 2820-2823
Abstract:
Finding an optimized absorber stack is becoming a more critical issue in the fabrication of extreme ultraviolet (EUV) mask since it is directly related to the performance of lithography such as pattern fidelity and productivity. Optical simulation, deposition, and measurement have been conducted to establish an optimized absorber stack including antireflection coating (ARC), absorber layer, and capping (or buffer) layer, which satisfies major requirements for EUV mask applications. TaN and the other absorber candidates do not show acceptable reflectivity value (lower than 5%) in deep ultraviolet (DUV) wavelength region (199 or 257nm) for pattern inspection. DUV reflectivity can be lowered by applying C and Al2O3 layers as top ARCs for 199 and 257nm wavelengths, respectively, while keeping the EUV reflectivity at 13.5nm less than 1%. ARC-covered TaN absorber stacks result in a reduction of printed CD variation owing to the mitigation of the shadow effect. However, long-term stability and fabricability of these stacks should be examined further.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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