In:
ECS Transactions, The Electrochemical Society, Vol. 16, No. 10 ( 2008-10-03), p. 117-124
Abstract:
The effects of SiN stress film, argon implantation and annealing on the stress of planar and patterned samples were examined. Stress levels changed with SiN films of line-and-space patterned samples can be well characterized by de-convoluting the UV-micro-Raman spectra. Argon implantation caused stress because argon atoms remained in silicon after long-time annealing. Larger stress change in the patterned sample than the planar sample by argon implantation was observed.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2008
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