In:
Journal of Applied Physics, AIP Publishing, Vol. 97, No. 12 ( 2005-06-15)
Abstract:
The effects of contamination overlayer and density as well as surface and interface roughnesses on the x-ray reflectivity of a SiO2 ultrathin film are discussed from viewpoints of experiment and theory. Grazing incidence x-ray reflectivity (GIXRR) is used to accurately measure physical structures of SiO2 ultrathin films grown on Si substrate by effectively resolving deviations caused by a contamination overlayer (i.e., H2O and carbonaceous compounds). GIXRR results indicate that only the thickness accuracy of a SiO2 film is largely affected by the overlayer. The thickness of a SiO2 film obtained from GIXRR peak extrema and theoretical fitting reveals that if a SiO2 film with the thickness of 2.64nm is considered as a single layer, the H2O overlayer with a thickness of 0.55nm makes the thickness of the SiO2 film increase to 3.09nm, and the deviation is about 17% from its corrected thickness. By evaluating the GIXRR results of three repeating measurements of a nominal 4-nm SiO2 film, its density, thickness, and surface and interface roughnesses are 2.43±0.01g∕cm3, 3.99±0.03nm, and 0.40±0.02nm and 0.25±0.02nm, respectively.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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