In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 4 ( 2008-07-01), p. 1277-1280
Abstract:
Bi 1.5 Mg 1.0 Nb 1.5 O 7 thin films were deposited at various temperatures by rf-magnetron sputtering on Pt/TiO2/SiO2/Si substrates. The structural and electrical properties were investigated as a function of deposition temperature. The films deposited below 400 °C show an amorphous state and a dielectric constant of approximately 31–51. On the other hand, films deposited at 500 °C exhibit well-developed crystallinity and a high dielectric constant of approximately 104. However, for crystallized films deposited at 500 °C, the leakage current density is higher than that of the films deposited below 300 °C.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2008
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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