In:
Journal of Applied Physics, AIP Publishing, Vol. 97, No. 12 ( 2005-06-15)
Abstract:
The effect of increasing the number of quantum wells in a strain-compensated, multiquantum-well solar cell is investigated. It is found that as the well number is increased, dark current level close to the operating point rises linearly. Short-circuit current in the AM0 spectrum also rises linearly with the inclusion of more quantum wells. This allows the cell to maintain a constant open-circuit voltage irrespective of the number of wells grown. This is anticipated to have advantages when the cell is used as a replacement for the GaAs junction in the existing generation of tandem and triple-junction cells since current levels can be matched to the upper junction without detriment to the voltage performance. This result allows us to predict a tandem cell AM0 efficiency of 23.8% based on the 50-well cell.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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