In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 13 ( 2008-09-29)
Abstract:
Low dislocation density ultraviolet (UV) AlGaN∕GaN multiple quantum well (MQW) structure was grown using atomic layer deposition (ALD) technique. The AlGaN∕GaN MQW grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers formed by ALD grown AlN∕GaN superlattices. The as-grown sample showed smooth surface morphology with a root-mean-square roughness value of only 0.35nm, and no surface cracks were found. The dislocation density was estimated to be as low as 3.3×107cm−2. X-ray and transmission electron microscope data showed the MQW had sharp interfaces with good periodicity. The sample had an UV photoluminescence emission at 334nm (3.71eV) with a very narrow linewidth of 47meV at 13K. The cathodoluminescence image revealed a fairly uniform luminescence pattern at room temperature. The AlGaN∕GaN MQW grown by ALD technique should be useful for providing high crystalline quality for fabrication of various optical devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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