In:
Journal of the Society for Information Display, Wiley, Vol. 16, No. 4 ( 2008-04), p. 541-544
Abstract:
Abstract— The selective area growth (SAG) of a InGaN/AlGaN light‐emitting diode (LED) is performed by using mixed‐source hydride vapor‐phase epitaxy (HVPE) with a multi‐sliding boat system. The SAG‐InGaN/AlGaN LED consists of a Si‐doped AlGaN cladding layer, an InGaN active layer, a Mg‐doped AlGaN cladding layer, and a Mg‐doped GaN capping layer. The carrier concentration of the n ‐type Al x Ga 1−x N ( x ∼ 16%) cladding layer depends on the amount of poly‐Si placed in the Al‐Ga source. The carrier concentration is varied from 2.0 × 10 16 to 1.1 × 10 17 cm −3 . Electroluminescence (EL) characteristics show an emission peak wavelength at 426 nm with a full width at half‐maximum (FWHM) of approximately 0.47 eV at 20 mA. It was found that the mixed‐source HVPE method with a multi‐sliding boat system is a candidate growth method for III‐nitride LEDs.
Type of Medium:
Online Resource
ISSN:
1071-0922
,
1938-3657
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2190777-8
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