In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 527-529 ( 2006-10), p. 1289-1292
Abstract:
Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs
and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are
suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules
is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease
in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.527-529
DOI:
10.4028/www.scientific.net/MSF.527-529.1289
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2047372-2
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