In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 10 ( 2013-08-31), p. 235-245
Abstract:
This study compares the physical, electrical, and reliability characteristics of the high- k HfO 2 film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750 o C, the single-step annealed HfO 2 has transformed into the polycrystalline phase, whereas the multi-step annealed HfO 2 is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO 2 film with respect to the grain formation process. Additionally, the density and composition of the HfO 2 film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO 2 film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO 2 gate stacks.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05810.0235ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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