In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 1072 ( 2008)
Abstract:
We report the energy band alignment of Ge 2 Sb 2 Te 5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel silicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge 2 Sb 2 Te 5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge 2 Sb 2 Te 5 and these CMOS compatible materials were established.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-1072-G02-08
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2008
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