Note: Front Cover -- Silicon Epitaxy: Semiconductors and Semimetals -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. CVD Technologies For Silicon: A Quick Survey -- Abbreviations Used -- I. Introduction -- II. Bulk Polycrystalline Silicon Processes -- III. Film Deposition: Reactors -- IV. Film Deposition: Products and Chemistries -- V. Aerosol CVD -- VI. Conclusions -- References -- Chapter 2. Epitaxial Growth Theory: Vapor-phase and Surface Chemistry -- I. Introduction -- II. Development of a Detailed Kinetic Scheme -- III. Gas-phase Kinetics for Silanes and Chlorosilanes -- IV. Surface Kinetics for Silanes and Chlorosilanes -- V. Gas-phase Precursors to Deposition and Overall Kinetic Scheme -- VI. Overall Kinetic Scheme and Concluding Remarks -- References -- Chapter 3. Epitaxial Growth Facilities, Equipment, and Supplies -- Abbreviations Used -- I. Introduction -- II. The Epitaxial Reactor -- III. Facilities -- IV. Process Gas and Delivery -- V. Exhaust Treatment -- VI. Equipment for Power Epitaxy -- VII. Advanced Applications -- VIII. Conclusion -- References -- Chapter 4. Epitaxial Growth Techniques: Low-temperature Epitaxy -- Abbreviations Used -- I. Introduction -- II. CVD Machines -- III. Surface Treatment -- IV. Epitaxial Growth Mechanisms -- V. High-quality Si/Si1-x Gex/Si Heterostructure Growth at High Ge Fractions -- VI. Conclusions -- References -- Chapter 5. Epitaxial Growth Techniques: Molecular Beam Epitaxy -- Abbreviations Used -- I. Introduction -- II. MBE Machines -- III. Surface Treatment -- IV. Growth Mechanisms -- V. Doping -- VI. Growth of SiGe(C) Alloys -- VII. Formation of Si/Ge Heterostructures -- VIII. Growth of SiGe Buffer Layers -- IX. Selective Growth -- X. Formation of Superlattices, Quantum Wires, and Quantum Dots -- XI. Conclusion -- References -- Chapter 6. Epitaxial Growth Modeling. , Nomenclature -- I. Introduction -- II. Detailed Modeling of Epitaxial Reactors -- III. Reduced-order Models for Epitaxial Silicon Deposition -- IV. Atomistic Aspects: Control of Crystal Morphology -- V. Summary -- References -- Chapter 7. Epitaxiai Layer Characterization and Metrology -- Abbreviations Used -- I. Introduction -- II. On Sampling and Accuracy -- III. Doping Control -- IV. Thickness Measurements -- V. Contamination and Surface Quality -- VI. Future Developments and Conclusions -- References -- Chapter 8. Epitaxy for Discrete and Power Devices -- Nomenclature -- I. Introduction -- II. General Considerations -- III. Specific Epitaxy Processes for Power and Discrete Devices -- IV. Defects and Problems -- V. Accessory Considerations -- Chapter 9. Epitaxy on Patterned Wafers -- I. Introduction -- II. Device Requirements and Process Complexity -- III. Surface Preparation: Pre-epitaxial Cleaning -- IV. Geometrical Pattern Integrity -- V. Doping Pattern Integrity -- VI. Crystal Defectivity -- VII. Conclusion: The Best Epitaxial Recipe? -- Bibliography -- Chapter 10. Si-based Alloys: SiGe and SiGe:C -- I. Introduction -- II. Applications of Si Alloys -- III. Low-temperature Surface Preparation -- IV. Process Chemistry for Si Alloy Deposition -- V. Metrology of Si1-x Gex Layers -- VI. Production Robust Si1-x Gex Processing -- VII. Summary -- References -- Chapter 11. Silicon Epitaxy: New Applications -- I. Introduction -- II. Equipment: State of the Art -- III. Epitaxy Processes -- IV. New Applications -- V. Conclusion -- References -- Index -- Contents of Volumes In This Series -- Color Plate Section.

Note: Front Cover -- Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Chapter 1. Introduction -- 1. Introduction -- 2. Wet Etching -- References -- Chapter 2. Gallium Arsenide Heterostructures -- 1. Introduction -- 2. Crystal Growth and Properties of GaAs -- 3. Growth and Material Properties of GaAs Heterostructures -- 4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices -- References -- Chapter 3. Growth and Optical Properties of GaN -- 1. Introduction -- 2. Gallium Nitride and its Growth on Different Substrates -- 3. Line Width and Quantum Beats in GaN -- 4. Time-Resolved Spectroscopy of GaN Epilayers -- 5. p-GaN -- 6. n-GaN -- 7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures -- 8. GaN Quantum Wells -- References -- Chapter 4. SiGe/Si Processing -- 1. Introduction -- 2. SiGe/Si Material Properties and Processing Challenges -- References -- Chapter 5. Advances in Quantum Dot Structures -- 1. Introduction -- 2. Physical Properties -- 3. State of the Art -- References -- Chapter 6. Wet Etching of III-V Semiconductors -- 1. Introduction -- 2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods -- 3. Types of Etching Reactions -- 4. Some Solid-State and Electrochemical Data on III-V Semiconductors -- 5. Kinetics and Mechanisms of Etching Reactions at III-V Semiconductors -- 6. Material-Selective Etching -- 7. Etch Morphologies and Profiles -- 8. Conclusions -- References -- Index -- Contents of Volumes in This Series.

Note: Cover -- Title -- Copyright -- TABLE OF CONTENTS -- Foreword -- Preface -- The Editors -- Editorial Board -- Part 1: Lehmann's Phosphor Cookbook and Phosphor Tables -- Section 1: Introduction -- Section 2: Phosphor Preparation -- Section 3: Purification of Some Starting Materials -- Section 4: Phosphor Data -- Section 5: Preparation of Phosphor Screens -- Part 2: Additional Developments -- Section 6: Phosphor Synthesis -- Section 7: Other Phosphor Data -- Section 8: Commercial Phosphors and Scintillators -- Appendices -- Back Cover.

Note: Cover -- Contents -- Introduction -- Chapter 1. Making decisions: a difficult problem -- 1.1 Interventions, actions and decisions -- The Egyptian Water Plan -- 1.2 Difficulties and keys to their solutions -- 1.3 Planning: the PIP procedure -- 1.4 The decision-making levels -- 1.5 A multi-level MODSS: TWOLE -- 1.6 Monitoring -- Part A: Setting the Verbano Project -- Chapter 2. Reconnaissance: territory, Stakeholders and regulation -- 2.1 The territory -- 2.2 The Stakeholders -- 2.3 The regulation of the lake -- 2.4 Dissatisfaction -- 2.5 The Decision Makers -- 2.6 The Goal -- Chapter 3. The options for interventions -- 3.1 Modifying the outlet -- 3.2 Norms for hydropower reservoirs -- 3.3 Modifying the regulation range -- 3.4 Minimum environmental flow -- 3.5 Designing a different regulation -- 3.6 Other interventions -- 3.7 Actions and alternatives -- Chapter 4. Criteria and indicators -- 4.1 Sectors and criteria -- 4.2 Hierarchies of criteria -- 4.3 Examples of indicators -- 4.4 Alternatives, indicators and indices -- 4.5 The indicators of the Verbano Project -- Chapter 5. Defining actions and formulating the Design Problem -- 5.1 Types of actions -- 5.2 Regulation actions -- 5.3 Structural and normative actions -- 5.4 Solving the Design Problem -- Chapter 6. Identifying the Model -- 6.1 The structure of the model -- 6.2 The models of the single units -- 6.3 The time step -- 6.4 The notation -- 6.5 The catchment -- 6.6 The lake -- 6.7 The diversion nodes -- 6.8 Confluence points -- 6.9 The sectors and the indicators -- 6.10 The model of Verbano water system -- Chapter 7. The Control Problem -- 7.1 The design time horizon -- 7.2 How a design indicator is identified -- 7.3 The design indicators for Verbano -- 7.4 Verifying the design indicators -- 7.5 The design scenario -- 7.6 Formulating the Control Problem. , 7.7 Solving the Control Problem: SDP -- 7.8 Discretization of the system and computing time -- Chapter 8. Estimating Effects[text=]BBB -- 8.1 Uncertainty and stochasticity -- 8.2 Choosing the inflow series -- 8.3 The evaluation scenario -- 8.4 The extractor: the model of the Regulator -- 8.5 Validating the indicators -- Chapter 9. Evaluation -- 9.1 Multi-Attribute Value Theory -- 9.2 The value functions -- 9.3 Identifying the partial value functions -- 9.4 Identifying the global value function -- 9.5 A special case: the value function for the ENEL Power sector -- 9.6 Validating the value function -- Chapter 10. Comparison -- 10.1 The Comparison Method -- 10.2 Preliminaries to the Comparison phase -- 10.3 Identification of alliances -- 10.4 Mitigation -- 10.5 Identification of the reasonable alternatives -- Part B: Identifying the reasonable alternatives -- Chapter 11. Designing Alternatives and Evaluation -- 11.1 Designing Alternatives -- 11.2 Estimating Effects -- 11.3 Validating the indicators -- 11.4 Evaluating the alternatives -- Chapter 12. Comparison: the first negotiation step -- 12.1 Sharing the results of the evaluation -- 12.2 Preliminary analysis -- 12.3 Individual exploration -- 12.4 A0's performance -- 12.5 Negotiations -- 12.6 The results of the first negotiations step -- Chapter 13. Comparison: the second negotiation step -- 13.1 Designing the alternatives -- 13.2 The second negotiation step -- 13.3 The least-bad alternatives -- Chapter 14. Mitigation measures -- 14.1 The effects on Downstream Flooding -- 14.2 Mitigation measures for Downstream Flooding -- 14.3 Mitigation for Upstream Environment -- 14.4 Mitigation for the other sectors -- 14.5 The third negotiation step -- Part C: The Final Decision -- Chapter 15. Summary of the Project -- 15.1 The Problem -- 15.2 The development of the Project. , 15.3 The reasonable and least-bad alternatives -- 15.4 Mitigation measures -- 15.5 Monitoring -- Chapter 16. The Final Decision -- 16.1 The decision -- 16.2 Which future for the decision? -- Chapter 17. Implementation -- 17.1 Designing other interventions -- 17.2 Management and the POLFC scheme -- References -- Index.

Note: MATERIALS SCIENCE Raman Scattering in Materials Science -- Springer Series in MATERIALS SCIENCE 42 -- Raman Scattering in Materials Science -- Copyright -- Preface -- Contents -- List of Contributors -- 1 Overview of Phonon Raman Scattering in Solids -- I The Effect of a Surface Space-Charge Electric Field on Raman Scattering by Optical Phonons -- 2 Raman Instrumentation -- 3 Characterization of Bulk Semiconductors Using Raman Spectroscopy -- II Finding the Stress from the Raman Shifts: A Case Study -- III Brillouin Scattering from Semiconductors -- 4 Raman Scattering in Semiconductor Heterostructures -- IV Raman Scattering Enhancement by Optical Confinement Semiconductor Planar Microcavities -- 5 Raman Scattering in High- Tc Superconductors: Phonons, Electrons, and Magnons -- V Thoughts About Raman Scattering from Superconductors -- VI Two-Magnon Inelastic Light Scattering -- 6 Raman Applications in Catalysts for Exhaust-Gas Treatment -- VII Historical Perspective of Raman Spectroscopy in Catalysis -- 7 Raman Scattering Spectroscopy and Analyses of III-V Nitride-Based Materials -- 8 Raman Scattering in Fullerenes and Related Carbon-Based Materials -- VIII A Case History in Raman and Brillouin Scattering: Lattice Vibrations and Electronic Excitations in Diamond -- 9 Raman Spectroscopic Studies of Polymer Structure -- IX C.V. Raman: A Personal Note -- 10 Raman Scattering in Perovskite Manganites -- X Raman Scattering from Perovskite Ferroelectrics -- Index.

Note: Cover -- Inside front cover -- Contents -- Preface -- 1 Vector Analysis -- 2 Vector Analysis in Curved Coordinates and Tensors -- 3 Determinants and Matrices -- 4 Group Theory -- 5 Infinite Series -- 6 Functions of a Complex Variable I: Analytic Properties Mapping -- 7 Functions of a Complex Variable II: Calculus of Residues -- 8 Differential Equations -- 9 Sturm-Liouville Theory-Orthogonal Functions -- 10 The Gamma Function (Factorial Function) -- 11 Legendre Polynomials and Spherical Harmonics -- 12 Bessel Functions -- 13 Hermitie and Laguerre Polynomials -- 14 Fourier Series -- 15 Integral Transforms -- 16 Partial Differential Equations -- 17 Probability -- 18 Calculus of Variations -- 19 Nonlinear Methods and Chaos -- Appendix 1 Real Zeros of a Function -- Index -- Inside back cover.