In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 2 ( 2014-02-01), p. 021201-
Abstract:
We report a GaAs tunnel junction grown by all-solid-state molecular beam epitaxy (MBE), using tellurium (Te) and magnesium (Mg) as n- and p-type dopants, respectively. The growth conditions, including V/III ratio, and growth rate, growth temperature, were optimized. Through these optimizations, Te- and Mg-doped GaAs with high carrier concentrations as well as good mobilities were obtained. A GaAs tunnel junction with a peak current density of 21 A/cm 2 was demonstrated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.021201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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