In:
physica status solidi c, Wiley, Vol. 7, No. 2 ( 2010-02), p. 264-267
Abstract:
The GaAs and InAs (001) surfaces chemically treated in HCl‐isopropanol solution (HCl‐iPA) and annealed in vacuum were studied by means of photoemission, low energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). The photoemission results demonstrated that the chemical treatment removed native oxides from Ga(In)As surfaces and yielded As‐rich surface with several monolayers of excess arsenic and small amounts of GaCl x (InCl x ). Annealing at relatively low‐temperatures induced desorption of this overlayer and revealed a clean arsenic‐rich (2x4)/ c (2x8) structure on GaAs and InAs(100) surfaces. The structural properties of chemically prepared III‐As (001) surfaces were found to be similar to those obtained by decapping of As‐capped epitaxial layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200982435
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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