In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 25, No. 31 ( 2011-12-20), p. 4237-4240
Kurzfassung:
High density plasma etching of SnO 2 and ZnO films was performed in chlorine- ( Cl 2 / Ar and BCl 3 / Ar ) and fluorine-based ( CF 4 / Ar and SF 6 / Ar ) inductively coupled plasmas. The etch process window for fabricating metal oxide nanowires with high aspect ratios including high and controllable etch rates, high etch selectivities to mask material and high anisotropy was established. Maximum etch rates of ~2050 Å/minute ( BCl 3 / Ar ) and ~1950 Å/minute ( SF 6 / Ar ) for ZnO , and ~1950 Å/minute ( Cl 2 / Ar ) and ~2000 Å/minute ( SF 6 / Ar ) for SnO 2 were obtained. Ni was found to provide very high etch selectivities with maximum values of ~67 to SnO 2 and ~17 to ZnO , respectively.
Materialart:
Online-Ressource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S0217979211066660
Sprache:
Englisch
Verlag:
World Scientific Pub Co Pte Ltd
Publikationsdatum:
2011
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