In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 8 ( 2011), p. 088501-
Abstract:
Bipolar n-p-n transistor geometrical parameters are optimized based on the principle of minimizing the perimeter-to-area ratio (P/A). Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process. The first is emitter-base junction hardened n-p-n transistor. The second has heavily boron doped base ring. And the last uses both radiation-resistant measurements. The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy, in current gain, the common n-p-n(unhardened) transistor reduces about 60%65%, while the first two hardened n-p-n transistors increases 10%15%: the last hardened n-p-n transistors are 15%20% greater than the common n-p-n transistors in current gain.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.60.088501
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2011
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