In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 2 ( 2012), p. 027301-
Abstract:
HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation in xx and quantum Hall plateaus of xy are observed, indicating that it is a good transistor. By measuring the magnetoresistance near zero field, we observe the weak antilocalization effect in our sample, suggesting a relatively strong spin-orbit coupling. The experimental data can be well fitted by the ILP theory. The fitting-obtained spin-splitting energy increases with increasing electron concentration, and the maximum reaches up to 9.06 meV. From the obtained spin-splitting energy, we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration, which is contrary to the observations in a wide quantum well.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.61.027301
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2012
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