In:
Surface and Interface Analysis, Wiley, Vol. 46, No. S1 ( 2014-11), p. 341-343
Abstract:
Doping of phosphorus in silicon is important for the formation of n‐type semiconducting material for the silicon‐based electronic devices. In this study, the diffusion behavior of P in a SiO 2 /InP‐doped Si multilayer film was investigated by SIMS depth profiling. It showed a clear preferential diffusion of P to the Si/SiO 2 interface regions. This behavior will act as a negative factor for the active doping of P in silicon quantum dot (QD) solar cells. As a result, the conversion efficiency of a heterojunction Si QD solar cell with a P‐doped Si QD layer was much lower than that with a B‐doped Si QD layer. Copyright © 2014 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2014
detail.hit.zdb_id:
2023881-2
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