In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 25, No. 18 ( 2011-07-20), p. 2403-2410
Abstract:
The effect of grain boundary on the characteristics of poly- Si metal–insulator–semiconductor photodetector is investigated utilizing two-dimensional device simulator. In the investigation, the trap states in grain boundary are composed of two types: tail states and deep-level states, both of which consist of acceptor-like trap and donor-like trap. The simulation results show that the photocurrent of photodetector decreases considerably in the case of tail states above 5 ×19 cm -3 , but less susceptible to deep-level states. Furthermore, it is found that the spectral responsivities of the photodetector decrease when the energy level of acceptor-like traps shifts towards the midgap, but keep unchanged for the case of donor-like traps.
Type of Medium:
Online Resource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S021797921110076X
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2011
Permalink
