Publication Date:
2011-09-17
Description:
Thermally grown amorphous SiO 2 films were implanted at room temperature with 100 keV C-ions to 5.0×10 17 or 1.2×10 18 ions/cm 2 . These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10 11 , 1.0×10 12 , 5.0×10 12 ions/cm 2 , or with 308 MeV Xe-ions to 1.0×10 12 , 1.0×10 13 , 1.0×10 14 ions/cm 2 , respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si—C bonds and sp 2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO 2 . Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO 2 under swift heavy ion irra...
Print ISSN:
1674-1137
Topics:
Physics
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