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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (20)
  • 2010-2014  (20)
  • 1
    Online-Ressource
    Online-Ressource
    A reflective grism pair stretcher for chirped pulse amplification
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2013
    In:  Acta Physica Sinica Vol. 62, No. 9 ( 2013), p. 094202-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 9 ( 2013), p. 094202-
    Kurzfassung: A new reflective grism, which combines together the grating and prism, is introduced in this paper. The numerical simulation, based on the ray tracing, shows that the grism pair can introduce minus GVD and GDD; therefore it can well compensate for the material dispersions in the chirped pulse amplifier (CPA). Compared to the conventional CPA with up-chirp, the new scheme with down-chirp can support a near Fourier Transform-limited compressed pulse due to much better compensation for high-order dispersion of materials in amplifier, in which the grism acts as the stretcher and the ZF7 bulk material as the compressor. In addition, the improved transmission efficiency and simplified configuration makes it a promising way to amplify femtosecond laser pulses to sub-mJ at a high repetition rate.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.62.094202
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2013
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Online-Ressource
    Online-Ressource
    First-principles study of electronic transport properties of C20F20 molecule
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2010
    In:  Acta Physica Sinica Vol. 59, No. 3 ( 2010), p. 2010-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 59, No. 3 ( 2010), p. 2010-
    Kurzfassung: Using first-principles density functional theory and non-equilibrium Green’s function method, we investigated the electronic transport properties of C20F20 molecule. The calculation shows that the zero bias equilibrium conductance of C20F20 molecule is 0.385 G0. The I-V curve presents good linear characteristic. Under finite bias voltage the molecule displays stable conductance characteristic, and could be made as one steadying resistance molecular device.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.59.2010
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2010
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    Geometry, electronic properties and magnetism of FenO+m(n+m=4) clusters
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2010
    In:  Acta Physica Sinica Vol. 59, No. 11 ( 2010), p. 7845-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 59, No. 11 ( 2010), p. 7845-
    Kurzfassung: The initial geometries of FenO+m(n+m=4) clusters are built by using the "binomial" scheme. And 12 stable isomers are obtained by optimization and frequency analysis based on the density-functional theory GGA (PW91) and the all-electron numerical basis set. The binding energies, the energy gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, and the magnetic moments of all the stable isomers are determined and analyzed. It is found that Fe—O bonds are important for stabilizing the FenO+m clusters, and that the total magnetic moments of the isomers are mainly dependent on the magnetic moment of iron atoms and the arrangement of the magnetic moments of the atoms.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.59.7845
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2010
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Online-Ressource
    Online-Ressource
    Photo-detachment of hydrogen negative ion in a magnetic field near a dielectric surface
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 6 ( 2012), p. 063202-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 6 ( 2012), p. 063202-
    Kurzfassung: Using the closed orbit theory, we study the photo-detachment of H- in a magnetic field near a dielectric surface. The photo-detachment cross section of this system is also derived and calculated. It is found that the photo-detachment cross section is not only related to the magnetic field strength, but also depends on the dielectric constant. For a given ion-surface distance and dielectric constant, with the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillatory structure in the photo-detachment cross section becomes much more complicated. On the other hand, for a given magnetic field strength, the dielectric constant also has a great influence on the photo-detachment process of negative ion. Above the ionization threshold, the photo-detachment cross section becomes oscillatory. With the increase of the dielectric constant, the oscillatory structure in the cross-section becomes much more complicated. Therefore we can control the photo-detachment of negative ion by changing the magnetic field strength and the dielectric constant. This study provides a new understanding of the photo-detachment process of negative ion in the presence of external fields and surfaces.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.063202
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Online-Ressource
    Online-Ressource
    Influence of laser pulse on the photodetachment of H- ion near a metal surface
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 5 ( 2011), p. 053402-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 5 ( 2011), p. 053402-
    Kurzfassung: Using the closed orbit theory and the formulas of double-pulse laser pulse photodetachment cross section of H- ion near a metal surface, we calculated the laser pulse photodetachment cross section of this system. The results suggest that for the double-pulse laser, if the pulse width is much longer than the particular closed orbit period, the contribution of that closed orbit to the photodetachment cross section is very small. If the pulse width is shorter or can be compared with the particular closed orbit period,the contribution of that closed orbit to the photodetachment cross section is reduced. The cross section depends not only on the pulse width, but also on the time delay and the relative phase of the two pulses. For certain relative phase between the two pulses, the photodetachment cross section is increased; while for other relative phases, the photodetachment cross section is reduced. Therefore, we can use the pulse laser to control the photodetachment process of H- near a metal surface. We hope our results will be helpful for experimental research of photodetachment of negativeion influenced by pulse laser near surfaces.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.053402
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
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    Online-Ressource
    Wave packet dynamics of the photodetachment ofH- near a metal surface
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 10 ( 2011), p. 103401-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 10 ( 2011), p. 103401-
    Kurzfassung: The wave packet dynamics of the photodetachment of H- near metal surface is studied by using the wave packet evolution and the autocorrelation function. The results show that the evolution and the revival structure of the detached electron depend not only on the ion-surface distance, but also on pulse width and initial pulse momentum. Therefore, we can control the wave packet dynamics of H- near a metal surface by changing the ion-surface distance and the parameter of the pulse laser. Besides, the electronic image state lifetime can also affect the wave packet evolution and the autocorrelation function. We find that with considering the electronic state lifetime,the amplitude of the quantum probability density decreases gradually with time,the whole wave packet structure has a significant attenuation and the lifetime can weaken the interference phenomenon in the process of wave packet evolution. Through the research on the autocorrelation function of electronic wave packet, we find that the wave packet exhibits a good revival structure without considering the lifetime of the state lifetime; however, with considering the lifetime of the state lifetime, the wave packet periodically collapses and expands with time,but after a period of time, the revival structure disappears. We hope that our theoretical study will provide some references for the experimental research of wave packet dynamics of negative ion near surfaces.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.103401
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
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    Study of the photodetachment of H- in a microcavity
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 5 ( 2011), p. 053203-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 5 ( 2011), p. 053203-
    Kurzfassung: Using the closed orbit theory, we studied the photodetachment cross section of H- in a microcavity, which is made of two parallel metal and elastic surfaces. The results show that both the upper and lower surfaces of the microcavity have great influence on the photodetachment cross section of H-. If we fix the distance between the metal surface and H-, when the distance between the elastic surface and H- is large, the influence of the elastic surface on the photodetachment cross section is small. The oscillation amplitude and the oscillation frequency of the cross section approach to the case of the photodetachment of H- near a metal surface. With the decrease of the distance between the elastic surface and H-, the oscillation amplitude is increased and the oscillation frequency is decreased. If we fix the distance between the elastic surface and H-, with the increase of the distance d0 between the metal surface and H-, the influence of the metal surface is decreased. When the d0 is increased to 500 a.u. the cross section approaches to the case of the photodetachment of H- near an elastic surface. So we can change the distance between the upper and lower surface of the microcavity to control the photodetachment of H-. This study provides a new understanding on the photodetachment process of H- in the presence of surfaces and microcavity.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.053203
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
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    Online-Ressource
    Photodetachment of H－ ion in a uniform electric field near a metal surface
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2010
    In:  Acta Physica Sinica Vol. 59, No. 2 ( 2010), p. 932-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 59, No. 2 ( 2010), p. 932-
    Kurzfassung: Using the closed orbit theory, we calculate the photodetachment cross section of H-ion in a uniform electric field near a metal surface. The results show that the photodetachment cross section of H- near the threshold has a significant change after the metal surface has been placed in the uniform electric field. Compared with the situation of the photodetachment of H- ion in a single uniform electric field, the oscillating amplitude of the photodetachment cross section of this system is increased and the oscillating frequency is decreased. If we keep the electric field strength at a given value, we find that with the increase of the distance between the metal surface and the H- ion, the oscillating amplitude of the photodetachment cross section decreases and the oscillating frequency increases. When the ion-to-surface distance increases to a certain value, the influence of the metal surface disappeared, and the photodetachment cross section approaches the photodetachment cross section of H- in a uniform electric field.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.59.932
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2010
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
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    Spatial dispersion of pulse shaping system with high resolution based on the frequency comb
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 18 ( 2012), p. 184201-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 18 ( 2012), p. 184201-
    Kurzfassung: High resolution pulse shaping based on the frequency comb has been widely used in microwave photonics, spectroscopy and communication optics and so on. To describe and evaluate the resolution capability of such a pulse shaping system, the ray tracing method is adopted to analyze the spatial dispersions of four schemes like single grating, parallel gratings, single grating with focus and anti-parallel gratings with focus. The spot spacings and sizes of different wavelengths can be determined from the modeling. As indicated by the calculation results, the latter two structures are advantageous to achieve high resolution pulse shaping; frequency combs with long wavelength, large mode spacing and big spot size are favorable for space dispersion; high grating groove density, small incident angle and multi passes in the dispersion system are conducible to the achievement of high resolution. The criterion for resolution would bring on some spot overlap noise.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.184201
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
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    Online-Ressource
    Study on the photodetachment of H- ion near a dielectric sphere
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2014
    In:  Acta Physica Sinica Vol. 63, No. 23 ( 2014), p. 233201-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 23 ( 2014), p. 233201-
    Kurzfassung: Photodetachment of hydrogen negative ion near a dielectric sphere has been studied by using the image method combined with the semiclassical closed orbit theory. Firstly, we analyze the image charge distribution of the detached electron near the dielectric sphere; then we put forward the Hamiltonian for this system. By solving the Hamiltonian canonical equations, we can find the closed orbits of the detached electrons moving near the dielectric sphere. With the help of the semiclassical closed orbit theory, we derive the formula for calculating the photodetachment cross section of this system. Then we can calculate and analyze the photodetachment cross section. Calculated results suggest that the photodetachment cross section of the hydrogen negative ion near a dielectric sphere is not only related to the photon energy, but also the dielectric constant of the sphere. For a given dielectric sphere, with the increase of photon energy, the oscillating amplitude in the photodetachment cross section decreases while the oscillation frequency increases. When the photon energy is increased to a critical value, the oscillating structures in the cross section disappear. In addition, with the increase in the dielectric constant of the dielectric sphere, the oscillating structure in the photodetachment cross section becomes much more complicated. When the dielectric constant is increased to infinity, the photodetachment cross section of this system is consistent with the photodetachment cross section of the hydrogen negative ion near a metal sphere. Therefore, we can control the photodetachment cross section of the hydrogen negative ion near a dielectric sphere by changing the photon energy and the dielectric constant. Our study may provide some theoretical guidance and reference values for the experimental research of photodetachment of negative ion near the dielectric sphere.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.63.233201
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2014
    Standort Signatur Einschränkungen Verfügbarkeit
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