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  • AIP Publishing  (4)
  • 2010-2014  (4)
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  • AIP Publishing  (4)
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  • 2010-2014  (4)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2010
    In:  Applied Physics Letters Vol. 97, No. 25 ( 2010-12-20)
    In: Applied Physics Letters, AIP Publishing, Vol. 97, No. 25 ( 2010-12-20)
    Abstract: We have demonstrated the compensation between optical gain and light scattering in electrically pumped random lasing (RL) from ZnO films through investigating the electroluminescence of MgxZn1−xO/ZnO (x=0.25 and 1) heterostructured devices. As the active ZnO films are sol-gel derived, both heterostructured devices can be electrically pumped into RL at appropriate forward currents. While the active ZnO films are prepared by sputtering, only the MgO/ZnO heterostructured devices can generate RL pumped with sufficient forward currents. It is believed that the light scattering in the sputtered ZnO films is weaker than that in the sol-gel derived ones. However, the inferior light scattering capability of the sputtered ZnO films can be compensated by the MgO/ZnO-heterostructure-enabled higher optical gain in the electrically pumped RL.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 22 ( 2013-11-25)
    Abstract: Current saturation in graphene field-effect transistor (GFET) is of significant importance to improve the maximum oscillation frequency (fmax). We investigated the direct current (dc) and radio frequency (rf) characteristics of a heavily p-type doped GFET based on chemical vapor deposition grown material. The drain current saturation is found in our device. It cannot be explained by the “pinch-off” effect associated with ambipolar transport, but can be attributed to nonlinear channel conductance and velocity saturation in unipolar channel. This study promotes understanding the behaviors of heavily doped GFETs and their radio frequency applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 100, No. 23 ( 2012-06-04)
    In: Applied Physics Letters, AIP Publishing, Vol. 100, No. 23 ( 2012-06-04)
    Abstract: Electrically pumped lasing actions from the metastable CdZnO films have hardly been achieved as yet. Herein, we have demonstrated electrically pumped wavelength-tunable blue random lasing from the hexagonal CdZnO films with different Cd contents, with central wavelength changing from ∼490 to 425 nm. The devices based on the metal-insulator-semiconductor structures of Au/SiO2/CdZnO on silicon substrates are constructed for electrical pumping of the CdZnO films. The insulator layers of SiO2 onto the CdZnO films in the devices should be annealed at sufficiently low temperature such as 400 °C so that the CdZnO films can be kept their integrity in terms of near-band-edge emissions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 2013
    In:  The Journal of Chemical Physics Vol. 139, No. 1 ( 2013-07-07)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 139, No. 1 ( 2013-07-07)
    Abstract: It is a challenge to simulate the switching process of functional self-assembled monolayers (SAMs) on metal surfaces, since the systems consist of thousands of atoms and the switching is triggered by quantum-mechanical events. Herein a molecular dynamics simulation with a reactive rotation potential of N=N bond is implemented to investigate the dynamic conformational changes and packing effects on the stimuli-responsive isomerization of the terminally thiol functionalized azobiphenyls (AZOs), which are bound on the Au(111) surface. To, respectively, distinguish the time evolutions that start from cis and trans initial configurations, two different functions are established to model the potential energy curves for cis-to-trans and trans-to-cis transitions, instead of the only one cosine function used in the conventional non-reactive force fields. In order to simulate the conformation transitions of the AZO film on surface, a random switching function, depending on the N=N twisting angle, is constructed to consider both forward and backward cis/trans isomerization events and to trigger the reaction by changing the N atom types automatically. The factors that will influence the isomerization process, including the choice of ensembles and thermostat algorithms, the time intervals separating each switching, and the forms of the switching function, are systematically tested. Most AZO molecules switch from the cis to trans configuration with a coverage of 5.76 × 10−6 mol/m2 on a picosecond time scale, and a low coverage might make the switching irreversible, which is in agreement with the experiments.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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