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  • AIP Publishing  (5)
  • 2010-2014  (5)
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  • AIP Publishing  (5)
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  • 2010-2014  (5)
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  • 1
    Online Resource
    Online Resource
    Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 116, No. 11 ( 2014-09-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 116, No. 11 ( 2014-09-21)
    Abstract: We have fabricated magnetoelectric heterostructures by growing ferromagnetic La1-xBaxMnO3 (x = 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb1/2)O3-0.34PbTiO3 (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110] , or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature TC of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and TC are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R)strain] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La0.8Ba0.2MnO3 film and 150 K for the La0.6Ba0.4MnO3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4896172
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Tuning electronic and magnetic properties of armchair|zigzag hybrid graphene nanoribbons by the choice of supercell model of grain boundaries
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 115, No. 10 ( 2014-03-14)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 115, No. 10 ( 2014-03-14)
    Abstract: Grain boundaries (GBs) attract much interest for its ability to tune the property of hybrid materials. Theoretically predicting the properties of hybrid graphene with GBs, even a linear GB remains challenging due to its inhomogeneous structure, which makes supercell model tough to choose in theoretic studies. For the first time, the applicability of supercells with different GBs and lattice-mismatches for describing armchair-zigzag hybrid graphene nanoribbons was validated by ab initio molecular dynamic simulations and first principles electronic structure calculations. And to what extent the electronic properties can be tuned by the strain effects resulting from the lattice-mismatch and the GBs distortion in supercells was demonstrated. This work showed that the intrinsic strain in such system plays a decisive role in determining the band structure and spin polarization properties. Hybrid graphene nanoribbon was found to be ferromagnetic in the ground state, especially for the case of using the supercell with nearly-perfect lattice match. Its high Curie temperature suggests the potential applications of this material in spintronics.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4868082
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Stable High-Energy Density Super-Atom Clusters of Aluminum Hydride
    AIP Publishing ; 2012
    In:  Chinese Journal of Chemical Physics Vol. 25, No. 2 ( 2012-04-01), p. 147-152
    Details
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 25, No. 2 ( 2012-04-01), p. 147-152
    Abstract: With the concept of super-atom, first principles calculations propose a new type of super stable cage clusters AlnH3n that are much more energetic stable than the well established clusters, AlnHn+2. In the new clusters, the aluminum core-frame acts as a super-atom with n vertexes and 2n Al-Al edges, which allow to adsorb n hydrogen atoms at the top-site and 2n at the bridge-site. Using Al12H36 as the basic unit, stable chain structures, (Al12H36)m, have been constructed following the same connection mechanism as for (AlH3)n linear polymeric structures. Apart from high hydrogen percentage per molecule, calculations have shown that these new clusters possess large heat of formation values and their combustion heat is about 4.8 times of the methane, making them a promising high energy density material.
    Type of Medium: Online Resource
    ISSN: 1674-0068 , 2327-2244
    URL: Article
    DOI: 10.1088/1674-0068/25/02/147-152
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 2381472-X
    SSG: 6,25
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  • 4
    Online Resource
    Online Resource
    Divertor asymmetry and scrape-off layer flow in various divertor configurations in Experimental Advanced Superconducting Tokamak
    AIP Publishing ; 2012
    In:  Physics of Plasmas Vol. 19, No. 4 ( 2012-04-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 19, No. 4 ( 2012-04-01)
    Abstract: Divertor asymmetry and its dependence on the ion ▿B direction has been investigated in the Experimental Advanced Superconducting Tokamak by changing the divertor configuration from lower single null (LSN), via double null (DN), to upper single null (USN) during one single discharge. Divertor plasmas exhibit the usual in-out asymmetry in particle and heat fluxes in LSN with the ion ▿B direction toward the lower X-point, favoring the outer divertor, especially at high density. The in-out asymmetry is reversed when changing the divertor configuration from LSN to USN, thus clearly demonstrating the effect of classical drifts. DN exhibits an even stronger in-out divertor asymmetry, favoring the outer divertor. A significant top-down asymmetry is also seen for DN, with greater particle and heat fluxes to the bottom divertor. In addition, the parallel plasma flow has been measured by a fast moving Mach probe at the outer midplane, which shows similar magnitude to the Pfirsch-Schlüter flow. Its contribution to the poloidal particle flux is also assessed and comparison is made with that from the poloidal E × B drift.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.4707396
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 1472746-8
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  • 5
    Online Resource
    Online Resource
    p -type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 21 ( 2013-11-18)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 21 ( 2013-11-18)
    Abstract: Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm2V−1s−1 and a hole concentration of 1.67 × 1017 cm−3, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4833275
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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