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  • AIP Publishing  (14)
  • 2010-2014  (14)
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  • AIP Publishing  (14)
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  • 2010-2014  (14)
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  • 1
    Online Resource
    Online Resource
    Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 105, No. 17 ( 2014-10-27)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 105, No. 17 ( 2014-10-27)
    Abstract: Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4900750
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 102, No. 23 ( 2013-06-10)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 102, No. 23 ( 2013-06-10)
    Abstract: In this letter, the conduction and switching mechanisms of Al/AlOx/WOx/W bilayer resistive random access memory devices are investigated. Five stable resistance states were achieved through current compliance control. For each resistance state, I-V characteristics at different temperatures were measured. Conduction mechanisms are found to vary with resistance states. At low resistance levels, devices show ohmic conduction with metallic behavior. Conduction at medium resistance levels is due to electron hopping. The carrier transport at high resistance levels is governed by Schottky emission. Based on the resistance-dependent transport characteristics, an oxygen migration model is proposed to explain the switching mechanism between different resistance states.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4810000
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 102, No. 17 ( 2013-04-29)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 102, No. 17 ( 2013-04-29)
    Abstract: We report the design and fabrication of W:AlOx/WOx bilayer based resistive switching cells in a standard 0.18 μm CMOS process with only one extra mask. The devices show excellent performance with low power consumption. Low operation voltages (SET voltage  & lt; 1.5 V, RESET voltage  & lt; 1.3 V) are achieved, and specifically, the RESET and SET currents are lower than 1 μA. For the 0.3 μm×0.3 μm active area of the cell, the current density is below 1.1×103A/cm2, which is much smaller than previous reported results. To reveal the resistive switching mechanism, various physical analysis techniques were employed to examine the microstructures, compositions, and chemical states. Current-voltage and capacitance-voltage electrical characterizations were carried out on these devices. Based on the physical and electrical characteristics, a conductive filament formation and rupture mechanism is proposed to explain the W:AlOx/WOx bilayer structure resistive switching phenomena.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4803462
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Digital time-resolved optical measurement of discharge currents in long air gaps
    AIP Publishing ; 2013
    In:  Review of Scientific Instruments Vol. 84, No. 8 ( 2013-08-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 84, No. 8 ( 2013-08-01)
    Abstract: Shortcomings in the dynamic range and the frequency bandwidth of current diagnostic methods mean that measurement of the time-resolved discharge current in a long air gap discharge is still a serious problem. This work presents data from a novel discharge current sensor that takes the parameters required to determine the accuracy of the current measurement into account. The design of a coaxial current sensor with ±0.7% accuracy and a bandwidth of 75 MHz is presented. A digital optical fiber transmission system with a bandwidth that exceeds 100 MHz is used to transmit the signal. To demonstrate the efficiency of the whole system, experiments using a rod-plane discharge geometry with 2 m and 4 m air gap lengths are performed to analyze the measured current data in comparison with that taken from synchronized high-speed photographs. The results demonstrate that the investigated experimental set-up improves substantially the understanding of the fundamental mechanisms of long air gap discharges.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4817208
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 99, No. 15 ( 2011-10-10)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 99, No. 15 ( 2011-10-10)
    Abstract: We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than ∼106 cm−2, which is consistent with the measurements of the state-of-the-art GaN RTDs. At around 300 GHz, the simulation for a RTD oscillator also demonstrates evident decreases of rf power and efficiency because of the electron trapping effect.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3650253
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 6
    Online Resource
    Online Resource
    Study of mechanical and dielectric spectrum in YFe1-xMnxO3 ceramics
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 115, No. 3 ( 2014-01-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 115, No. 3 ( 2014-01-21)
    Abstract: The mechanical spectra of Mn-substituted yttrium orthoferrite YFe1-xMnxO3 (x = 0, 0.2, 0.3, 0.4) ceramics were performed at kilohertz from 100 to 360 K. Two internal friction (IF) peaks are observed around 150 K and 230 K, respectively, and both the IF peaks exhibit frequency dispersion behavior. The IF peak around 150 K is associated with a step increase in the modulus and its mechanical relaxation rate follows the Vogel-Fulcher relation with τ0 = 4.45 × 10−11s, Eα = 0.03 eV, and TVF = 155 K. This IF peak can be explained in terms of a freezing of oxygen vacancies after excluding the possible magnetic spin glass transition. Another IF peak around 230 K presents a relaxation behavior and it follows Arrhenius law. Furthermore, the relaxation behavior was verified by the dielectric spectrum and it can be ascribed to the charge carrier hopping between Fe2+ and Fe3+.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4862301
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Oxidation of the two-phase Nb/Nb5Si3 composite: The role of energetics, thermodynamics, segregation, and interfaces
    AIP Publishing ; 2013
    In:  The Journal of Chemical Physics Vol. 138, No. 1 ( 2013-01-07)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 138, No. 1 ( 2013-01-07)
    Abstract: Oxidation behavior of the two-phase Nb/Nb5Si3 composite is of significant importance for the potential applications of the composite at high-temperature conditions. We investigate the atomic-scale oxidation mechanism of the Nb/Nb5Si3 composite with first-principles density-functional theory and thermodynamics analysis. In particular, the effects of energetics, thermodynamics, segregation, and interfaces are identified. The clean composite surface is found to be composed of both Nb(110) and Si-terminated Nb5Si3(001). Energetics and thermodynamics calculations show that, during the oxidation process, the Nb(110) surface is oxidized first, followed by the segregation of niobium of the Nb5Si3(001) surface and subsequent oxidation of the Nb element of Nb5Si3. High coverage of oxygen results in dissolved oxygen in bulk Nb through the diffusion of oxygen in the surface and at the interface. The theoretical investigation also provides an explanation, at the atomic-scale, for the experimental observation that the oxidation layer is essentially composed of niobium oxide and almost free of silicon. Furthermore, the methodology of this work can be applied to investigations of the oxidation behavior of other two-phase and multi-phase composites.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.4773447
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 8
    Online Resource
    Online Resource
    A comparison of biomass gasification and pyrolysis in three kinds of reactors using corn stalk pellets
    AIP Publishing ; 2012
    In:  Journal of Renewable and Sustainable Energy Vol. 4, No. 3 ( 2012-05-01)
    Details
    In: Journal of Renewable and Sustainable Energy, AIP Publishing, Vol. 4, No. 3 ( 2012-05-01)
    Abstract: Biomass resources are abundant in China, the cultivation of which is encouraged as it could provide energy for future social and economic development. Utilization of biomass pellets for energy through gasification could help ease critical problems such as energy shortage and environmental deterioration in China. In this paper, the performance of three types of gasification and pyrolysis reactors—downdraft, bubbling, and pyrolysis—were evaluated in terms of thermal output using the same corn stalk pellets. The three reactors were connected in parallel with a common control system, condenser, root blower, gas tank, and gas chromatography (GC) system. Gas composition was analysed using two GC columns. The lower heating values (LHVs) of the pellets, pellets charcoal, and bio-oil were analysed using a rapid screening device. Analyses of the properties of the pellets and pellets charcoal were carried out using an automatic proximate analyser. In the downdraft reactor, gas with an LHV of 3.91–4.44 MJ/Nm3 was obtained at a reduction zone temperature (RZT) of 660–760 °C. In the bubbling reactor, gas with an LHV of 8.48–9.38 MJ/Nm3 was obtained at an RZT of 575–750 °C. In the pyrolysis reactor, gas with an LHV of 14.51–16.49 MJ/Nm3 was obtained at a pyrolysis temperature of 380–530 °C, and pellets charcoal and bio-oil were formed in the pyrolysis reactor as gas-assisted products.
    Type of Medium: Online Resource
    ISSN: 1941-7012
    URL: Article
    DOI: 10.1063/1.4729594
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 2444311-6
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  • 9
    Online Resource
    Online Resource
    TDDFT Study on Different Sensing Mechanisms of Similar Cyanide Sensors Based on Michael Addition Reaction
    AIP Publishing ; 2011
    In:  Chinese Journal of Chemical Physics Vol. 24, No. 3 ( 2011-06-01), p. 305-310
    Details
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 24, No. 3 ( 2011-06-01), p. 305-310
    Abstract: The solvents and substituents of two similar fluorescent sensors for cyanide, 7-diethylamino-3-formylcoumarin (sensor a) and 7-diethylamino-3-(2-nitrovinyl)coumarin (sensor b), are proposed to account for their distinct sensing mechanisms and experimental phenomena. The time-dependent density functional theory has been applied to investigate the ground states and the first singlet excited electronic states of the sensor as well as their possible Michael reaction products with cyanide, with a view to monitoring their geometries and photophysical properties. The theoretical study indicates that the protic water solvent could lead to final Michael addition product of sensor a in the ground state, while the aprotic acetonitrile solvent could lead to carbanion as the final product of sensor b. Furthermore, the Michael reaction product of sensor a has been proved to have a torsion structure in its first singlet excited state. Correspondingly, sensor b also has a torsion structure around the nitrovinyl moiety in its first singlet excited state, while not in its carbanion structure. This could explain the observed strong fluorescence for sensor a and the quenching fluorescence for the sensor b upon the addition of the cyanide anions in the relevant sensing mechanisms.
    Type of Medium: Online Resource
    ISSN: 1674-0068 , 2327-2244
    URL: Article
    DOI: 10.1088/1674-0068/24/03/305-310
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 2381472-X
    SSG: 6,25
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  • 10
    Online Resource
    Online Resource
    Concentric-roll pattern in a dielectric barrier discharge in air
    AIP Publishing ; 2010
    In:  Physics of Plasmas Vol. 17, No. 8 ( 2010-08), p. 082302-
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 17, No. 8 ( 2010-08), p. 082302-
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.3466854
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 1472746-8
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