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  • 2010-2014  (87)
  • 2005-2009  (1)
  • 1995-1999  (30)
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  • 1
    Electronic Resource
    Electronic Resource
    Detection of c-K-ras point mutation in ovarian cancer (1995)
    Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachussetts 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 5 (1995), S. 0 
    Details
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Point mutations of c-K-ras in ovarian cancer were detected by replacement of GGT of codon 12 by GAT, AGT, TGT and GTT, polymerase chain reaction, agarose gel electrophoresis and Southern blot hybridization with a digoxigenin detection system. The incidence of four-typed point mutations of c-K-ras oncogene in 37 ovarian cancers was 35.1% (13/37) and the distributions were 32.4% (12/37), 2.7% (1/37), 0% and 0% of GGT to GAT, GGT to AGT, GGT to TGT, and GGT to GTT, respectively. The incidence of c-K-ras point mutations on codon 12 among 37 patients with ovarian cancer was 35.5% (8/22) in those with serous cystadenocarcinomas and 28.6% (2/7) in those with mucinous cystadenocarcinomas. c-K-ras point mutations on codon 12 were detected in 14.3% (1/7) of patients with stage I disease, 28.6% (2/7) with stage II disease, and in 43.5% (10/23) with stage III/IV disease, and there was a statistically significant increase in point mutations of c-K-ras oncogene with advancing clinical stage. The incidence of c-K-ras point mutations on codon 12 among 33 patients who had a pelvic lymph node dissection was 52.4% (11/21) in those with pelvic lymph node metastases and 16.7% (2/12) in those without pelvic lymph node metastases, a statistically significant difference. Furthermore, point mutation of c-K-ras gene was found most frequently in patients with advanced stage disease, and in those with pelvic lymph node metastases. Activation of c-K-ras oncogene seems to be a major factor in ovarian carcinogenesis and tumor progression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1438.1995.05020107.x
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  • 2
    Electronic Resource
    Electronic Resource
    Stark effect and Stark-ladder effect in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2486-2494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements at 10 K were performed in order to investigate the influence of electric fields on the exciton states in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (ACMQW) grown by molecular-beam epitaxy. The coupling of the electronic energy levels in the wells led to an enhancement of the quantum-confined Stark effect. The PL intensity decreased as the electric field increased. Calculated values of the intersubband transition energies were in good agreement with the experimental values for the ACMQW, and these values showed a similar behavior as those for the step quantum well. When the external applied field was very strong, Stark-ladder transitions were observed, and the measured dependence of the field-induced energy shifts of the Stark-ladder transitions for the ACMQW agreed with theory. These results indicate that the Stark effect and the Stark-ladder transitions in a unique ACMQW based on the AlxGa1−xAs/GaAs structure were observed simultaneously. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358777
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122535
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  • 4
    Electronic Resource
    Electronic Resource
    Submicron stacked-junction fabrication from Bi2Sr2CaCu2O8+δ whiskers by focused-ion-beam etching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1156-1158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated submicron-sized intrinsic Josephson junctions by the focused-ion-beam (FIB) etching method. The principal result was a reduction of the in-plane junction area to 0.3 μm2 by direct FIB etching with no degradation in the critical transition temperature (Tc). In the current (I)–voltage (V) characteristics of these stacks, the gap structure and the normal state resistance are clearly observed together with a reduction of the Joule heating and disappearance of the branch structure. The Coulomb staircase structure was found in the I–V curves of submicron junctions as a result of their small effective capacitance of fF order. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123472
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  • 5
    Electronic Resource
    Electronic Resource
    The association of naevus lipomatosus with pilosebaceous abnormalities including fibrofolliculoma (2005)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 153 (2005), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.2005.06683.x
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  • 6
    Electronic Resource
    Electronic Resource
    Di-μ-chloro-bis[chloro(6,7,8,9,10,11,18,19-octahydro-5H,17H-dibenzo[f,o][1,5,9,13]dioxadiazacyclohexadecane)copper(II)] (1997)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 1020-1022 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197004496
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  • 7
    Electronic Resource
    Electronic Resource
    Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response (1997)
    Springer
    Optical and quantum electronics 29 (1997), S. 953-959 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge, the best dark current ever obtained from a large area InGaAs MSM PD. The device also shows a low capacitance of 0.8pF and a high 3dB bandwidth of 2.4GHz. By fitting the measured frequency response to a model consisting of both RC time and transit time limited responses, we show that the device has an RC time and a transit time limited 3dB bandwidth of 3.0 and 4.9GHz, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018589903010
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  • 8
    Electronic Resource
    Electronic Resource
    Feasibility study on the use of calcium alginate-entrapped hybridoma cells for IgM production (1995)
    Springer
    Bioprocess and biosystems engineering 12 (1995), S. 65-70 
    Details
    ISSN: 1432-0797
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract In order to test the feasibility of using calcium alginate-entrapped hybridoma cells for IgM production, HO-22-1 hybridoma cells entrapped into calcium alginate beads with varying alginate concentrations were cultivated in spinner flasks. It was observed that the IgM produced by the entrapped cells could diffuse out of the calcium alginate beads regardless of alginate concentrations tested (0.8–2.5%). Since the increase in alginate concentrations showed an adverse effect on cell growth and maximum cell concentration, the use of lower alginate concentration was desirable for higher volumetric monoclonal antibody (MAb) productivity. When the entrapped cells in 0.8% alginate beads were cultivated in repeated-fed batch mode, the reduction of serum concentration in the medium from 10% to 1% did not decrease the volumetric IgM production. Taken together, the data obtained here showed the feasibility of using calcium alginate-entrapped hybridoma cells for IgM production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01112995
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  • 9
    Electronic Resource
    Electronic Resource
    Amylase Polymorphism of Littorina brevicula from Polluted and Unpolluted Sites, Korea (1999)
    Springer
    Bulletin of environmental contamination and toxicology 63 (1999), S. 633-638 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001289901027
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  • 10
    Electronic Resource
    Electronic Resource
    Expression of the tumor necrosis factor α gene and early response genes by nodularin, a liver tumor promoter, in primary cultured rat hepatocytes (1997)
    Springer
    Journal of cancer research and clinical oncology 123 (1997), S. 413-419 
    Details
    ISSN: 1432-1335
    Keywords: Key words Tumor necrosis factor α ; Early-response genes ; Liver carcinogen ; mRNA stabilization ; Protein phosphatase inhibitor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Nodularin is a new liver carcinogen possessing a potent tumor-promoting activity in rat liver, mediated through inhibition of protein phosphatases 1 and 2A, and a weak initiating activity. Since we previously reported evidence that nodularin up-regulated expression of the tumor necrosis factor α gene (TNFα) and early-response genes in rat liver after its i.p. administration, and since TNFα had tumor-promoting activity in vitro, it is possible that TNFα itself is involved in liver tumor promotion. We investigated whether hepatocytes themselves induce expression of the TNFα gene and early-response genes in primary cultured rat hepatocytes treated with nodularin. Like nodularin, microcystin-LR, which is another liver tumor promoter belonging to the okadaic acid class, strongly induced TNFα gene expression in rat hepatocytes, as well as TNFα release from those cells into the medium. On the other hand, 12-O-tetradecanoylphorbol-13-acetate, which has been reported to induce no tumor promotion in rat liver, induced no apparent expression of the TNFα gene in primary cultured rat hepatocytes. As for the expression of early-response genes, 1 μM nodularin or microcystin-LR induced expression of the c-jun,  jun B, jun D, c-fos, fos B and fra-1 genes in the hepatocytes, and the expression of these genes was prolonged up to 24 h, suggesting mRNA stabilization induced by inhibition of protein phosphatases 1 and 2A. This paper presents new evidence that the TNFα gene and early-response genes were expressed in hepatocytes treated with a liver tumor promoter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01372544
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