In:
Advanced Materials, Wiley, Vol. 31, No. 39 ( 2019-09)
Abstract:
Atomically thin oxychalcogenides have been attracting intensive attention for their fascinating fundamental properties and application prospects. Bi 2 O 2 Se, a representative of layered oxychalcogenides, has emerged as an air‐stable high‐mobility 2D semiconductor that holds great promise for next‐generation electronics. The preparation and device fabrication of high‐quality Bi 2 O 2 Se crystals down to a few atomic layers remains a great challenge at present. Here, molecular beam epitaxy (MBE) of atomically thin Bi 2 O 2 Se films down to monolayer on SrTiO 3 (001) substrate is achieved by co‐evaporating Bi and Se precursors in oxygen atmosphere. The interfacial atomic arrangements of MBE‐grown Bi 2 O 2 Se/SrTiO 3 are unambiguously revealed, showing an atomically sharp interface and atom‐to‐atom alignment. Importantly, the electronic band structures of one‐unit‐cell (1‐UC) thick Bi 2 O 2 Se films are observed by angle‐resolved photoemission spectroscopy (ARPES), showing low effective mass of ≈0.15 m 0 and bandgap of ≈0.8 eV. These results may be constructive to the synthesis of other 2D oxychalcogenides and investigation of novel physical properties.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.201901964
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
1474949-X
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