In:
The Journal of Korean Institute of Electromagnetic Engineering and Science, Korean Institute of Electromagnetic Engineering and Science, Vol. 30, No. 4 ( 2019-04), p. 282-285
Type of Medium:
Online Resource
ISSN:
1226-3133
,
2288-226X
Uniform Title:
2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성
DOI:
10.5515/KJKIEES.2019.30.4.282
Language:
English
Publisher:
Korean Institute of Electromagnetic Engineering and Science
Publication Date:
2019
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