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  • 11
    In: Journal of Neurosurgery, Journal of Neurosurgery Publishing Group (JNSPG), Vol. 129, No. 5 ( 2018-11), p. 1136-1142
    Abstract: Transcranial color-coded duplex sonography (TCCS) is a reliable tool that is used to assess vasospasm in the M 1 segment of the middle cerebral artery (MCA) after subarachnoid hemorrhage (SAH). A distinct increase in blood flow velocity (BFV) is the principal criterion for vasospasm. The MCA/internal carotid artery (ICA) index (Lindegaard Index) is also widely used to distinguish between vasospasm and cerebral hyperperfusion. However, extracranial ultrasonography assessment of the neck vessels might be difficult in an intensive care unit. Therefore, the authors evaluated whether the relationship of intracranial arterial to venous BFV might indicate vasospasm with similar or even better accuracy. METHODS Patients who presented between 2008 and 2015 with aneurysmal SAH were prospectively enrolled in the study. Digital subtraction angiography (DSA) and TCCS were performed within 24 hours of each other to assess vasospasm 8–10 days after SAH. The following different TCCS parameters were analyzed to assess vasospasm in the MCA and were compared with the gold-standard DSA parameters: 1) mean time-averaged maximum BFV (V mean ) of the MCA, 2) peak systolic velocity (PSV) of the MCA, 3) the Lindegaard Index using V mean as well as PSV, and 4) a new arteriovenous index (AVI) between the MCA and the basal vein of Rosenthal using V mean and PSV. The best cutoff values for these parameters to distinguish vasospasm from normal perfusion or hyperperfusion were calculated using receiver operating characteristic curve analysis. Sensitivity, specificity, positive predictive value, and negative predictive value as well as the overall accuracy for each cutoff value were analyzed. RESULTS A total of 102 patients (mean age 52 ± 12 years) were evaluated. Bilateral MCA assessment by TCCS was successful in all patients. In 6 cases (3%), the BFV of the basal vein of Rosenthal could not be analyzed. The AVI could not be calculated in 50 of 204 cases (25%) because the insonation quality was very low in one of the ICAs. An AVI 〉 10 for V mean and an AVI 〉 12 for systolic velocity provided the highest accuracies of 87% and 86%, respectively. Regarding the Lindegaard Index, the accuracy was highest using a threshold of 〉 3 for the mean BFV (84%) as well as systolic BFV (80%). BFVs in the MCA of ≥ 120 cm/sec (V mean ) and ≥ 200 cm/sec (PSV) predicted vasospasm with accuracies of 84% and 83%, respectively. A combined analysis of the MCA BFV and the AVI led to a slight increase in specificity (V mean , 94%; PSV, 93%) and positive predictive value (V mean , 88%; PSV 86%) without further improvement in accuracy (V mean , 88%; PSV, 84%). CONCLUSIONS The intracranial AVI is a reliable parameter that can be used to assess vasospasm after SAH. Its reliability for differentiating vasospasm and hyperperfusion is slightly higher than that for the established Lindegaard Index, and this method has the additional advantage of a remarkably lower failure rate.
    Type of Medium: Online Resource
    ISSN: 0022-3085 , 1933-0693
    RVK:
    RVK:
    Language: Unknown
    Publisher: Journal of Neurosurgery Publishing Group (JNSPG)
    Publication Date: 2018
    detail.hit.zdb_id: 2026156-1
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  • 12
    Online Resource
    Online Resource
    Elsevier BV ; 2019
    In:  Ultrasound in Medicine & Biology Vol. 45, No. 5 ( 2019-05), p. 1103-1111
    In: Ultrasound in Medicine & Biology, Elsevier BV, Vol. 45, No. 5 ( 2019-05), p. 1103-1111
    Type of Medium: Online Resource
    ISSN: 0301-5629
    RVK:
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2019
    detail.hit.zdb_id: 1498918-9
    SSG: 12
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  • 13
    In: AIP Advances, AIP Publishing, Vol. 8, No. 11 ( 2018-11-01)
    Abstract: We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality and the interface alignment leading to devices with a conversion efficiency of 1.5% under 1-sun AM1.5G illumination. For thicker buffers the performance lessens due to inefficient tunnel transport through the AlN. These results demonstrate the feasibility of using In-rich AlInN alloys deposited by radio frequency sputtering as novel electron-selective contacts to Si-heterojunction solar cells.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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