In:
Advanced Materials, Wiley, Vol. 30, No. 12 ( 2018-03)
Abstract:
The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large‐scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS 2 , WS 2 , and MoSe 2 ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT‐patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS 2 –MoS 2 /CNT devices have Ohmic contacts between MoS 2 /CNT hybrid electrodes and MoS 2 channels. In addition, MoS 2 –MoS 2 /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold‐contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS 2 –MoS 2 /CNT photodetectors is applied for image sensing.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.201706215
Language:
English
Publisher:
Wiley
Publication Date:
2018
detail.hit.zdb_id:
1474949-X
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