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  • AIP Publishing  (28)
  • 2015-2019  (28)
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  • AIP Publishing  (28)
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  • 2015-2019  (28)
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  • 1
    Online Resource
    Online Resource
    A tuning method based on the coupled mode frequencies in biperiodic coupled-cavity linear accelerator
    AIP Publishing ; 2018
    In:  Review of Scientific Instruments Vol. 89, No. 12 ( 2018-12-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 89, No. 12 ( 2018-12-01)
    Abstract: A coupled-cavity linac (CCL) is widely used around the world in many fields. The radio frequency design is always a fundamental and crucial problem in CCL. In biperiodic structures, especially side-coupled structures, entirely different structures between accelerating cavities (ACs) and coupled cavities (CCs) will cause different frequency drops (δf) with the introduction of coupling slots. In order to achieve precise and consistent frequencies in each cell, the rule of individual cavity frequency drops should be figured out. A model of lumped resonant circuits is chosen to provide accurate prediction for normal mode frequencies. Through solving equivalent circuit equations, a parameter called frequency gap difference (ΔFg) is proposed, whose value is directly proportional to the frequency difference (df) between AC and CC and the ratio is one-to-one when AC frequency ( fa) is close to CC frequency ( fc). Based on the property of ΔFg, a simplified method on how to design and tune a triplet CCL is proposed; instead of tuning each individual cell, the new method only requires measuring the frequencies of the coupled normal modes, which considerably simplifies the tuning process and reduces the turn-around time. The particular design flow and tuning method have been successfully applied in the Nanjing University CCL Project. In addition, through comparing cavities with and without coupling slots, the value of frequency drops with different coupling coefficients is revealed and analyzed.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.5051567
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Mechanisms for plasma cryogenic etching of porous materials
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 17 ( 2017-10-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 17 ( 2017-10-23)
    Abstract: Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4999439
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Note: Laser wavelength precision measurement based on a laser synthetic wavelength interferometer
    AIP Publishing ; 2016
    In:  Review of Scientific Instruments Vol. 87, No. 8 ( 2016-08-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 87, No. 8 ( 2016-08-01)
    Abstract: A laser wavelength precision measurement method is presented based on the laser synthetic wavelength interferometer (LSWI). According to the linear relation between the displacements of measurement and reference arms in the interferometer, the synthetic wavelength produced by an unknown wavelength and a reference wavelength can be measured by detecting the phase coincidences of two interference signals. The advantage of the method is that a larger synthetic wavelength resulting from an unknown wavelength very close to the reference wavelength can be easily determined according to the linear relation in the interferometer. Then the unknown wavelength is derived according to the one-to-one corresponding relationship between single wavelength and synthetic wavelength. Wavelengths of an external cavity diode laser and two He-Ne lasers were determined experimentally. The experimental results show that the proposed method is able to realize a relative uncertainty on the order of 10−8.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4960079
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 4
    Online Resource
    Online Resource
    Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2
    AIP Publishing ; 2018
    In:  The Journal of Chemical Physics Vol. 148, No. 1 ( 2018-01-07)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 148, No. 1 ( 2018-01-07)
    Abstract: Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2–MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.4998672
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 5
    Online Resource
    Online Resource
    Scalable and efficient Sb2S3 thin-film solar cells fabricated by close space sublimation
    AIP Publishing ; 2019
    In:  APL Materials Vol. 7, No. 4 ( 2019-04-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 7, No. 4 ( 2019-04-01)
    Abstract: Antimony sulfide as a cost-effective, low-toxic, and earth-abundant solar cell absorber with the desired bandgap was successfully deposited using a scalable close space sublimation technique. The deposition process can separately control the substrate and source temperature with better engineering of the absorber quality. The device performance can reach 3.8% with the configuration of glass/FTO/CdS/Sb2S3/graphite back contact. The defect formation energy and the corresponding transition levels were investigated in detail using theoretical calculations. Our results suggest that Sb2S3 exhibits intrinsic p-type owing to S-on-Sb antisites (SSb) and the device performance is limited by the S vacancies. The localized conduction characterization at nanoscale shows that the non-cubic Sb2S3 has conductive grains and benign grain boundaries. The study of the defects, microstructure, and nanoscale conduction behavior suggests that Sb2S3 could be a promising photovoltaic candidate for scalable manufacturing.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/1.5090773
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2722985-3
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  • 6
    Online Resource
    Online Resource
    Precision measurement of refractive index of air based on laser synthetic wavelength interferometry with Edlén equation estimation
    AIP Publishing ; 2015
    In:  Review of Scientific Instruments Vol. 86, No. 8 ( 2015-08-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 86, No. 8 ( 2015-08-01)
    Abstract: A novel method for the precision measurement of refractive index of air (nair) based on the combining of the laser synthetic wavelength interferometry with the Edlén equation estimation is proposed. First, a nair_e is calculated from the modified Edlén equation according to environmental parameters measured by low precision sensors with an uncertainty of 10−6. Second, a unique integral fringe number N corresponding to nair is determined based on the calculated nair_e. Then, a fractional fringe ε corresponding to nair with high accuracy can be obtained according to the principle of fringe subdivision of laser synthetic wavelength interferometry. Finally, high accurate measurement of nair is achieved according to the determined fringes N and ε. The merit of the proposed method is that it not only solves the problem of the measurement accuracy of nair being limited by the accuracies of environmental sensors, but also avoids adopting complicated vacuum pumping to measure the integral fringe N in the method of conventional laser interferometry. To verify the feasibility of the proposed method, comparison experiments with Edlén equations in short time and in long time were performed. Experimental results show that the measurement accuracy of nair is better than 2.5 × 10−8 in short time tests and 6.2 × 10−8 in long time tests.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4928159
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell
    AIP Publishing ; 2016
    In:  Journal of Applied Physics Vol. 120, No. 17 ( 2016-11-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 120, No. 17 ( 2016-11-07)
    Abstract: Underdense hydrogenated amorphous silicon (a-Si:H) prepared by plasma-enhanced chemical vapor deposition was used as a passivation layer in silicon heterojunction (SHJ) solar cells. By reducing the thickness of the underdense a-Si:H passivation layer from 15 nm to 5 nm, the open circuit voltage (Voc) of the corresponding SHJ solar cell increased significantly from 724.3 mV to 738.6 mV. For comparison, a widely used transition-zone a-Si:H passivation layer was also examined, but reducing its thickness from 15 nm to 5 nm resulted in a continuous Voc reduction, from 724.1 mV to 704.3 mV. The highest efficiency was achieved using a 5-nm-thick underdense a-Si:H passivation layer. We propose that this advantageous property of underdense a-Si:H reflects its microstructural characteristics. While the porosity of a-Si:H layer enables H penetration into the amorphous network and the a-Si:H/c-Si interface, a high degree of disorder inhibits the formation of the epitaxial layer at the a-Si:H/c-Si interface during post-doping layer deposition.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4966941
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    Defect induced visible-light-activated near-infrared emissions in Gd3− x − y − z YbxBiyErzGa5O12
    AIP Publishing ; 2017
    In:  Journal of Applied Physics Vol. 122, No. 17 ( 2017-11-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 122, No. 17 ( 2017-11-07)
    Abstract: Visible-light-activated near-infrared luminescent materials are promising photoluminescent materials due to their convenience and low cost. Crystal defects can seriously affect the performance of luminescent materials, and better understanding of the complexity of the structural disorder and electronic structures of such materials opens up new possibilities in luminescent material development. In this work, we successfully design a novel, effective, visible-light-activated near-infrared luminescent Gd3Ga5O12: 4.2%Yb3+, 8.4%Er3+, and 4.2%Bi3+ system based on first principles. This exhibits strong emission intensity and high luminous efficiency (0.993) and also has a lifetime (7.002 ms) that is at least twice as long as the longest lifetime reported in published papers. We utilize density functional theory with an effective LSDA + U method to study the structural properties of Gd3−x−y−zGa5O12: xYb3+, yBi3+, zEr3+ (GGG: Yb3+, Bi3+, Er3+). The d and f electron orbits of rare-earth ions are considered for an effective Hund exchange. Detailed analysis reveals that GGG: 4.2%Yb3+, 8.4%Er3+, 4.2%Bi3+ has the smallest cell volume because of the strong covalent bonds of Bi–O, Er–O, and Yb–O. Bi 3d is a hybridized state that acts as sensitizing ions during the process of luminescence in GGG: Yb3+, Bi3+, Er3+. Together with experimental and theoretical results, we analyze the influence of defects on emission intensity. The locations of Yb3+, Er3+, and Bi3+ are determined by X-ray absorption fine structure measurements, which are in agreement with the model constructed using first principles. This work may provide innovative guidance for the design of high-performance visible-light-activated near-infrared luminophores based on calculations and a new methodology for application of coherent laser radar and optical communication.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5001974
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    Thermal equation of state of silicon carbide
    AIP Publishing ; 2016
    In:  Applied Physics Letters Vol. 108, No. 6 ( 2016-02-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 108, No. 6 ( 2016-02-08)
    Abstract: A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of the bulk modulus at a constant pressure (∂K/∂T)P = −0.037(4) GPa K−1, volumetric thermal expansivity α(0, T) = a + bT with a = 5.77(1) × 10−6 K−1 and b = 1.36(2) × 10−8 K−2, and pressure derivative of the thermal expansion at a constant temperature (∂α/∂P)T = 6.53 ± 0.64 × 10−7 K−1 GPa−1. Furthermore, we found the temperature derivative of the bulk modulus at a constant volume, (∂KT/∂T)V, equal to −0.028(4) GPa K−1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. The computed results generally agree well with the experimentally determined values.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4941797
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
    Online Resource
    Online Resource
    Defect induced gap states in monolayer MoS2 control the Schottky barriers of Pt-mMoS2 interfaces
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 110, No. 16 ( 2017-04-17)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 110, No. 16 ( 2017-04-17)
    Abstract: Vacancies can significantly affect the performance of monolayer MoS2 (mMoS2) nanodevices because defect induced gap states can introduce large Schottky barriers at Pt-mMoS2 interfaces. Effects of adsorbed gases at S-vacancies on the defect induced gap states and Schottky barriers of Pt-mMoS2 interfaces have been studied by first-principles calculations. The defect induced gap states are occupied (unoccupied) ones when electron-rich (electron-poor) gases adsorb at S-vacancies. The occupied gap states in mMoS2 result in n-type Schottky barriers, whereas unoccupied gap states cause p-type Schottky barriers. Moreover, both the n-type and p-type Schottky barriers of Pt-mMoS2 interfaces decrease when the gap states are closer to the valence bands of mMoS2 because the gap states determine the direction and the amount of charge transfer at interfaces. The n-type and p-type Schottky barriers of Pt-mMoS2 interfaces are reduced to 0.36 and 0 eV by adsorbing high concentrations Cl2 and CO, respectively. Furthermore, adsorbing electron-poor gases (CO and NO) at S-vacancies change the n-type Pt-mMoS2 interfaces to p-type ones. These findings provide guidance to develop approaches to design high performance metal-mMoS2 interfaces with low Schottky barriers.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4981775
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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