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  • AIP Publishing  (21)
  • 2015-2019  (21)
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  • AIP Publishing  (21)
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  • 2015-2019  (21)
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  • 1
    Online Resource
    Online Resource
    Electrochemical Performance and Capacity Fading Mechanism of LiFePO4 at Different pH Aqueous Electrolyte Solutions
    AIP Publishing ; 2015
    In:  Chinese Journal of Chemical Physics Vol. 28, No. 3 ( 2015-06-27), p. 315-322
    Details
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 28, No. 3 ( 2015-06-27), p. 315-322
    Abstract: The electrochemical stability of LiFePO4 in a Li+-containing aqueous electrolyte solution is critically dependent on the pH value of the aqueous solution. It shows a considerable decay in capacity of LiFePO4 upon cycling when the pH value is increased to 11. The mechanism responsible for the capacity fading is extensively investigated by means of cyclic voltammogram, ac impedance, charge/discharge, ex situ X-ray diffraction, and chemical analysis. LiFePO4 is relatively electrochemically stable in LiNO3 aqueous solution with pH=7. But the electrochemical performance of LiFePO4 in aqueous electrolyte is inferior to that in organic electrolyte. It is attributed to the loss of Li and the Fe, P dissolution during prolonged charge-discharge in aqueous medium. A precipitate is formed on the surface of LiFePO4 electrodes. It results in the change of crystalline structure, a large electrode polarization, and capacity fading.
    Type of Medium: Online Resource
    ISSN: 1674-0068 , 2327-2244
    URL: Article
    DOI: 10.1063/1674-0068/28/cjcp1502020
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 1106530-8
    detail.hit.zdb_id: 2381472-X
    SSG: 6,25
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  • 2
    Online Resource
    Online Resource
    Significant enhancement of photovoltage in artificially designed perovskite oxide structures
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 106, No. 13 ( 2015-03-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 13 ( 2015-03-30)
    Abstract: La0.9Sr0.1MnO3/insulator/SrNb0.007Ti0.993O3 multilayer and La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3/In2O3:SnO2(ITO)/La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3 multilayer structures were designed to enhance the photovoltage. The photovoltages of these two structures under an illumination of 308 nm laser are 410 and 600 mV, respectively. The latter is 20 times larger than that (30 mV) observed in La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3 single junction. The origin of such significant enhancement of photovoltage is discussed in this letter. These results suggest that the photoelectric property of perovskite oxides could be much improved by artificial structure designing. The enhanced photovoltaic effects have potential applications in the ultraviolet photodetection and solar cells.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4916993
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
    AIP Publishing ; 2016
    In:  Applied Physics Letters Vol. 109, No. 19 ( 2016-11-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 19 ( 2016-11-07)
    Abstract: Ge metal-oxide-semiconductor (MOS) capacitor with HfLaON/(NbON/Si) stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the Si passivation layer or the fluorine-plasma treatment. The experimental results show that the HfLaON/(NbON/Si) Ge MOS device treated by fluorine plasma exhibits excellent performance: low interface-state density (4.3 × 1011 cm−2 eV−1), small flatband voltage (0.22 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.18 × 10−5 A/cm2 at Vg = Vfb + 1 V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the NbON/Si dual interlayer and fluorine incorporation, thus reducing the defective states at/near the NbSiON/Ge interface and improving the electrical properties of the device.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4967186
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 5 ( 2017-07-31)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 5 ( 2017-07-31)
    Abstract: A Ge metal-oxide-semiconductor capacitor with a composite gate dielectric composed of a ZrON/TaON multilayer and a Si passivation layer treated with fluorine plasma is fabricated. Its interfacial and electrical properties are compared with those of its counterparts without the Si passivation layer or the fluorine-plasma treatment. Experimental results show that the device with the fluorinated Si passivation layer exhibits excellent interfacial and electrical performances: low interface-state density (2.0 × 1011 cm2 eV−1 at midgap), small flatband voltage (0.17 V), low gate leakage current (2.04 × 10−6 A/cm2 at Vg = Vfb + 1 V), and high equivalent dielectric constant (22.6). The involved mechanism lies in the fact that the TaSiON interlayer formed by mixing of TaON and Si passivation layers can effectively suppress the growth of unstable Ge oxides to reduce the defective states at/near the TaSiON/Ge interface. Moreover, the fluorine-plasma treatment can passivate the oxygen vacancies and conduce to the blocking of elemental inter-diffusions, thus largely improving the interfacial quality to achieve excellent electrical properties for the device.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4996722
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy
    AIP Publishing ; 2018
    In:  Review of Scientific Instruments Vol. 89, No. 4 ( 2018-04-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 89, No. 4 ( 2018-04-01)
    Abstract: We report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated MoS2 field effect transistors, and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-field microwave imaging with small distance modulation.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.5022997
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 6
    Online Resource
    Online Resource
    Piezoelectric modulation of nonlinear optical response in BaTiO3 thin film
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 113, No. 13 ( 2018-09-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 113, No. 13 ( 2018-09-24)
    Abstract: We study the nonlinear optical response in a strained thin film ferroelectric oxide BaTiO3 using piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (001) as a variable strain substrate and La-doped SrTiO3 as a conductive buffer layer. The rotation-anisotropic second harmonic intensity profile shows hysteretic modulation corresponding to the strain variation from the inverse piezoelectric response of the substrate. An enhancement of 15% is observed at 1.2 kV/cm, while a control sample shows negligible change as a function of piezovoltage. Reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and high-resolution scanning transmission electron microscopy reveal the epitaxial interface. X-ray diffraction and piezoresponse force microscopy confirm tetragonal distortion and ferroelectricity of the BaTiO3 overlayer. Our results suggest a promising route to enhance the performance of nonlinear optical oxides for the development of future nano-opto-mechanical devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5045460
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 106, No. 12 ( 2015-03-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 12 ( 2015-03-23)
    Abstract: InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm−2 eV−1 at midgap), smaller gate leakage current (9.5 × 10−5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4916539
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Polarization retention in ultra-thin barium titanate films on Ge(001)
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 112, No. 16 ( 2018-04-16)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 112, No. 16 ( 2018-04-16)
    Abstract: We investigate polarization retention in 10 to 19 nm thick ferroelectric BaTiO3 (BTO) grown on Ge(001) by molecular beam epitaxy. The out-of-plane direction and reversibility of electric polarization were confirmed using piezoresponse force microscopy. After reverse-poling selected regions of the BTO films to a value P with a biased atomic-force microscope tip, we monitored relaxation of their net polarization for as long as several weeks using optical second-harmonic generation microscopy. All films retained reversed polarization throughout the observation period. 10 nm-thick BTO films relaxed monotonically to a saturation value of 0.9 P after 27 days and 19 nm films to 0.75 P after 24 h. Polarization dynamics are discussed in the context of a 1D polarization relaxation/kinetics model.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5020549
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Manganese-centered tubular boron cluster – MnB16−: A new class of transition-metal molecules
    AIP Publishing ; 2016
    In:  The Journal of Chemical Physics Vol. 144, No. 15 ( 2016-04-21)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 144, No. 15 ( 2016-04-21)
    Abstract: We report the observation of a manganese-centered tubular boron cluster (MnB16−), which is characterized by photoelectron spectroscopy and ab initio calculations. The relatively simple pattern of the photoelectron spectrum indicates the cluster to be highly symmetric. Ab initio calculations show that MnB16− has a Mn-centered tubular structure with C4v symmetry due to first-order Jahn-Teller effect, while neutral MnB16 reduces to C2v symmetry due to second-order Jahn-Teller effect. In MnB16−, two unpaired electrons are observed, one on the Mn 3dz2 orbital and another on the B16 tube, making it an unusual biradical. Strong covalent bonding is found between the Mn 3d orbitals and the B16 tube, which helps to stabilize the tubular structure. The current result suggests that there may exist a whole class of metal-stabilized tubular boron clusters. These metal-doped boron clusters provide a new bonding modality for transition metals, as well as a new avenue to design boron-based nanomaterials.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.4946796
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 10
    Online Resource
    Online Resource
    Potassium doping: Tuning the optical properties of graphene quantum dots
    AIP Publishing ; 2016
    In:  AIP Advances Vol. 6, No. 7 ( 2016-07-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 6, No. 7 ( 2016-07-01)
    Abstract: Doping with hetero-atoms is an effective way to tune the properties of graphene quantum dots (GQDs). Here, potassium-doped GQDs (K-GQDs) are synthesized by a one-pot hydrothermal treatment of sucrose and potassium hydroxide solution. Optical properties of the GQDs are altered as a result of K-doping. The absorption peaks exhibit a blue shift. Multiple photoluminescence (PL) peaks are observed as the excitation wavelength is varied from 380 nm to 620 nm. New energy levels are introduced into the K-GQDs and provide alternative electron transition pathways. The maximum PL intensity of the K-GQDs is obtained at an excitation wavelength of 480 nm which is distinct from the undoped GQDs (375 nm). The strong PL of the K-GQDs at the longer emission wavelengths is expected to make K-GQDs more suitable for bioimaging and optoelectronic applications.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4959906
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 2583909-3
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