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  • 1
    Electronic Resource
    Electronic Resource
    Plasma source ion-implantation technique for surface modification of materials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4591-4596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma source ion-implantation (PSII) is a new ion-implantation technique which has been optimized for surface modification of materials such as metals, plastics, and ceramics. PSII departs radically from conventional implantation technology by circumventing the line-of-sight restriction inherent in conventional ion implantation. In PSII, targets to be implanted are placed directly in a plasma source and then pulse biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target simultaneously. Preliminary experiments have demonstrated that PSII: (1) efficiently implants ions to concentrations and depths required for surface modification, (2) produces material with improved microhardness and wear properties, and (3) dramatically improves the life of manufacturing tools in actual industrial applications. For example, the tool life of M-2 pierce punches used to produce holes in mild steel plate has been increased by a factor of 80.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339055
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  • 2
    Electronic Resource
    Electronic Resource
    Plasma source ion implantation dose uniformity of a 2×2 array of spherical targets (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed Rutherford backscattering spectroscopy and secondary ion mass spectrometry to characterize the ion implantation dose uniformity which can be achieved with plasma source ion implantation (PSII), a non-line-of-sight technique for ion implantation of nonplanar targets in nonsemiconductor applications. In order to characterize the dose uniformity achievable with PSII, four spherical Ti-6Al-4V targets were PSII implanted simultaneously as a 2×2 square array in a nitrogen plasma with density 3×109 cm−3 at an energy of 50 keV to a nominal dose of 3×1017 atoms/cm2. The measured root-mean-square variation of both the retained dose and the mean range was found to be less than 15%, which is well within the acceptable tolerance range for nonsemiconductor applications of ion implantation. Our results demonstrate that PSII can achieve acceptable dose uniformity on nonplanar targets without target manipulation, and that such uniformity can be achieved in a batch processing mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342942
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  • 3
    Electronic Resource
    Electronic Resource
    A methodology for the calibration of stress and motion instrumentation for dry soils (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1428-1437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique has been developed for calibrating stress and motion instrumentation in the stress region of 1–10 kbars based on the planar impact of a large metal flyer plate with a uniform dry soil testbed. By measuring the impact velocity of the plate and the propagation velocity of the resulting ground shock and assuming uniaxial soil strain with no strain recovery, the stress and motion fields in the testbed can be described completely. An analytical formulation based on these simple assumptions is developed. Hydrodynamic computer calculations are used to investigate the assumptions of the model. The results of numerical simulations of a flyer plate impacting a dry soil testbed are compared against the predictions of the theoretical model and experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339975
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  • 4
    Electronic Resource
    Electronic Resource
    Sheath thickness and potential profiles of ion-matrix sheaths for cylindrical and spherical electrodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 777-779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytic expressions have been obtained for the potential profile and sheath thickness of the transient ion-matrix sheath which forms when a large negative step potential is applied to planar, cylindrical, and spherical electrodes immersed in a plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339858
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  • 5
    Electronic Resource
    Electronic Resource
    High q-resolution electron gun for low energy electron diffraction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2642-2645 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new unipotential electron gun design for low energy electron diffraction. The gun has excellent spatial resolution. With a 170-mm gun-to-detector working distance, it produces a spot between 50 and 114 μm in diameter for energies between 500 and 100 eV, respectively. These specifications make it ideal for high q-resolution studies of surface defects. The unipotential design offers independent beam energy and current control without refocusing, and operates at beam currents as high as 25 nA (near the space-charge limit). The operating current of this gun is 10–40 times higher than existing guns with similar spatial properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140686
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  • 6
    Electronic Resource
    Electronic Resource
    Three-axis sample manipulator with XYZ translation for use in UHV (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 487-489 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A three-axis manipulator suitable for atom diffraction experiments has been constructed by combining three modules with translation, polar rotation, and azimuthal-tilt rotation capabilities. No magnetic materials are used and materials have been chosen to minimize the possibility of galling in vacuum. Azimuthal rotations of up to ±110°, tilt rotations of up to ±30°, and polar rotations of ±180° are possible with the manipulator. The Z motion is ±2 in. and XY motions of 10 mm lead to a change in azimuthal and tilt angles of less than one degree. The sample is heated with electron bombardment and can be cooled to 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138913
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  • 7
    Electronic Resource
    Electronic Resource
    Discharge and ion extraction properties of a beam-plasma ion source (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 816-818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discharge and ion extraction properties of a beam-plasma ion source have been studied experimentally. The extractable ion current is maximized when the discharge column length is chosen to be an optimum length. The peak extracted ion current can exceed the Child–Langmuir current as much as an order of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334730
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  • 8
    Electronic Resource
    Electronic Resource
    A helium diffraction study of the structure of the Ni(115) surface (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 3682-3692 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hard wall and soft wall potentials have been used to analyze helium diffraction data from Ni(115). From this analysis, we have determined the equipotential surface which is simply related to the electron charge distribution at the surface. Corrugation functions for the hard wall as well as the repulsive and classical turning point corrugation functions for a corrugated Morse potential have been compared with electron density contours calculated from atomic superposition. The corrugation functions determined from soft and hard wall potentials have the same shape and differ only slightly in their maximum amplitudes. This shows that the hard wall model is suitable for structural studies even on strongly corrugated surfaces. The shape of the surface corrugation is not in agreement with electron density contours calculated for bulk termination. Large surface relaxations can bring the shapes of the corrugation function and the electron density contour into good agreement. However, we conclude that these relaxations are physically unreasonable and that electron delocalization rather than shifts in atom position primarily determine the shape of the electron density contour at the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451971
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of surface roughening on Ni(115) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 1015-1028 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present evidence that the equilibrium topography of the Ni(115) surface in the temperature range 100 K〈T〈1000 K is that expected above its roughening temperature. This conclusion is based on a detailed line shape analysis of the specular diffraction peak at anti-Bragg angles as a function of temperature. The experimental results are combined with a generic phase diagram for stepped (11m) surfaces of face centered cubic (fcc) metals and is estimated that the roughening temperature of Ni(115) is below 50 K, that of Ni(113) approximately 200±50 K, and that of Ni(001) well above 420 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450634
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  • 10
    Electronic Resource
    Electronic Resource
    Debye–Waller effects in helium diffraction from Ni(115) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 5286-5292 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Debye–Waller effects in helium diffraction from Ni(115) have been analyzed in order to assess corrections required to determine surface corrugation functions from data taken at nonzero temperatures. It can be concluded that effective corrections can be made for all diffraction peaks by measuring the intensity as a function of temperature for the specular peak. Nonlinearities in Debye–Waller plots at high temperatures can be attributed to anharmonic effects but measurements must be carried out at Bragg angles of the three-dimensional lattice to avoid spurious nonlinearities due to the formation of kinks and steps. It can be further concluded that surface corrugation functions can be accurately determined without Debye–Waller corrections in general if the surface temperature is below 300 K and the Debye–Waller factor is not appreciably greater than the value for Ni(115).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449742
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