GLORIA

GEOMAR Library Ocean Research Information Access

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2015-2019  (28)
  • 1990-1994  (50)
  • 1965-1969  (32)
Document type
Language
Years
Year
  • 1
    Online Resource
    Online Resource
    Oxford :Taylor & Francis Group,
    Keywords: Space and time. ; Electronic books.
    Description / Table of Contents: Originally published in 1980. The author's arguments here provide grounds for rejecting both the absolutist and the relativist theories of time and presents two new theories, shifting the traditional debate to a consideration of time as a theoretical structure and theoretical framework.
    Type of Medium: Online Resource
    Pages: 1 online resource (277 pages)
    Edition: 1st ed.
    ISBN: 9780429671838
    Series Statement: Routledge Library Editions: Philosophy of Time Series
    DDC: 115
    Language: English
    Note: Cover -- Half Title -- Title Page -- Copyright Page -- Original Title Page -- Original Copyright Page -- Dedication Page -- Contents -- Preface -- I The Nature of Time -- 1 What is Time? -- 2 The Intractability of Time -- 3 Things in Time and Temporal Items -- 4 Reductionism -- 5 Platonism -- 6 A Plan of the Work -- II Time and Change -- 1 Reductionism and Aristotle's Principle -- 2 Changes -- 3 Inconceivability and Verification -- 4 Towards Changeless Time -- 5 Quantized Change -- 6 Date Causality -- 7 Duration Causality -- 8 Spatial Vacua and Reductionist Theories of Space -- 9 A Comparison of Temporal and Spatial Vacua -- 10 Temporal Vacua and Modalities -- III The Topology of Time I: The Linearity of Time -- I The Standard Topology -- 2 Cyclical Time and Closed Time -- 3 A Maximal Exposition of the Hypothesis of Closed Time -- 4 The Underdetermination of Theory by Data -- 5 Reductionism, Platonism and Closed Time -- IV The Topology of Time II: The Unity of Time -- 1 Space, Time and Unity -- 2 Non-unified Space -- 3 Non-unified Space and Non-unified Time -- 4 The Essentially Temporal Character of Evidence -- 5 Unified Space and Non-unified Time? -- V The Topology of Time III: The Beginning of Time -- 1 Beginnings and Endings -- 2 Aristotle, Swinburne and Tenses -- 3 Kant, Indefinite Extrapolation and Possibility -- 4 Empty Time, Leibniz and Explanation -- 5 Aristotle's Principle, Empty Time and the Beginning of the Universe -- VI The Topology of Time IV: The Micro-aspects -- 1 The Micro-structure of Time -- 2 Discrete Time -- 3 The Empirical Significance of Continuity Postulates -- 4 The Points of Time -- 5 The Russellian Construction of Instants -- 6 Instants as Propositions -- 7 Instants as Parts of Durations -- 8 Intervals of Time -- VII The Metric of Time -- 1 Dates and Durations -- 2 The Metrication of Time -- 3 Clocks and Conventions. , 4 Choosing a Clock -- 5 Conventionalism -- 6 Objectivism -- 7 Platonism and Objectivism -- 8 Objectivism and Semantic Revisionism -- 9 Unmeasurable Time -- VIII The Special Theory of Relativity -- 1 The Special Theory of Relativity -- 2 The Lorentz Transformations -- 3 Consequences of the Lorentz Transformations -- (i) Relativization of Simultaneity and Platonism -- (ii) STR and the Topology of Time -- (iii) Quine and the STR -- 4 The Twins Paradox -- 5 Platonism, Reductionism and the Special Theory of Relativity -- IX The Direction of Time -- 1 The Criterion of Temporal Order -- 2 Memory and Temporal Order -- 3 Memories and Mories -- 4 Physical Correlates -- 5 Predicates and Relations without Physical Correlates -- X Towards a Positive Theory -- 1 What, then, is Time? -- 2 Platonism -- 3 Time as a Construction from Events -- 4 Time as a Logical Space -- 5 Time as a System of Non-empirical Abstract Objects -- 6 The Flexible Response Theory -- 7 The Facts of the Matter -- 8 Time as a Theoretical Structure -- 9 Time as a Theoretical Framework -- Appendix: Properties of Relations -- Notes -- Bibliography -- Index.
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 2
    facet.materialart.
    Unknown
    Oceans and Law of the Sea, United Nations
    In:  EPIC3The First Global Integrated Marine Assessment, Chapter 36G: Arctic Ocean, New York, Oceans and Law of the Sea, United Nations, 47 p., pp. 1-47
    Publication Date: 2016-03-13
    Repository Name: EPIC Alfred Wegener Institut
    Type: Inbook , peerRev
    Format: application/pdf
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 3
    facet.materialart.
    Unknown
    In:  EPIC3Polar Biology, 11, pp. 219-225
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 3019-3027 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a new efficient Monte Carlo method for the molecular-based computer simulation of chemical systems undergoing any combination of reaction and phase equilibria. The method requires only a knowledge of the species intermolecular potentials and their ideal-gas properties, in addition to specification of the system stoichiometry and thermodynamic constraints. It avoids the calculation of chemical potentials and fugacities, as is similarly the case for the Gibbs ensemble method for phase equilibrium simulations. The method's simplicity allows it to be easily used for situations involving any number of simultaneous chemical reactions, reactions that do not conserve the total number of molecules, and reactions occurring within or between phases. The basic theory of the method is presented, its relationship to other approaches is discussed, and applications to several simple example systems are illustrated.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6237-6246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stresses induced in an evaporated Pt(75 nm)/Ti(50 nm) bilayer metallization scheme on InP and SiO2 (300 nm)/InP substrates, as well as the stress in a SiO2 layer (300 nm) on an InP substrate, were measured in situ during sintering at temperatures of 25 to 500 °C and after rapid thermal processing (RTP) at temperatures of 400, 450, and 500 °C for 30 s. The as-deposited highly tensile Pt/Ti bilayer structure on InP (5×109 dyn cm−2) was found to be stress-free when heated to 400 °C and to have relatively low tensile stress after cooling back to room temperature. The as-deposited Pt/Ti/SiO2 structure on InP was found to be only moderately tensile stressed (3×109 dyn cm−2) and became more tensile as a result of heating to 500 °C (5×109 dyn cm−2). The high tensile stress was preserved even after cooling back to room temperature. This is mostly due to the tendency of the plasma-enhanced chemical vapor deposited (PECVD) SiO2 layer to undergo densification and switch its as-deposited compressive stress (−2.5×109 dyn cm−2) to tensile (2×109 dyn cm−2) when heated to 500 °C. The measured stresses after rapid thermal processing (RTP) revealed no observable difference from the in situ measured stresses. This suggests a negligible influence of the speed of heating and cooling through the RTP on the overall stresses induced in the thin layers. The previously unknown coefficient of thermal expansion and the biaxial elastic moduli of the PECVD SiO2 and the evaporated Ti and Pt thin films were determined by in situ stress measurements of the above-mentioned structure as well as systems composed of the same thin layers deposited on Si, GaAs, GaP, and InAs substrates.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1123-1128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the viability of depositing a thick Au bonding pad on top of Pt/Ti contacts on both p-InGaAs and n-InP within a single evaporation prior to heat treatment. This eliminates the usual post-sinter Au plating process. In particular, Au (500 nm)/Pt (60 nm)/Ti (50 nm) common contacts to Zn-doped 5×1018 cm−3 p-In0.53Ga0.47As and S-doped 1×1018 cm−3 n-InP were formed within a single pumpdown electron-gun evaporation and subsequently a single sintering process by means of rapid thermal processing. The lowest resistivity of these ohmic contacts were found to be 0.11 and 0.13 Ω mm (5.5×10−7 and 8×10−6 Ω cm2) for the p and n contacts, respectively. These values were achieved as a result of heating at 450 °C for 30 sec. This heat treatment caused a limited reaction at the Au-Pt and Pt-Ti interfaces, which did not lead to any significant intermixing of the Ti and Au. Thus, no significant indiffusion of the Au thorough the Pt barrier was observed and contact degradation did not occur. The stress of the as-deposited trilayer structure on InP was found to be 3×108 dyne cm2 tensile and increased to about 2×109 dyn cm2 as a result of the rapid thermal processing at 450 °C
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 785-792 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical damage imparted to InP and In0.72Ga0.28As0.6P0.4 (λg(approximately-equal-to)1.3 μm) surfaces during CH4/H2 reactive ion etching (RIE) have been examined. X-ray photoelectron spectroscopy was used to monitor changes in the surface chemistry, Rutherford backscattering spectrometry was used to measure crystallographic damage, and current-voltage and capacitance-voltage measurements were made to examine electrically active damage and its depth. Two classes of damage are observed: crystallographic damage originating from preferential loss of P (As) and/or ion bombardment-induced collision cascade mixing and, for p-type material, hydrogen passivation of Zn acceptors. Etching at 13.6 MHz, 60–90 mTorr, 10% CH4/H2, and bias voltages of ∼300 V contains gross ((approximately-greater-than)1%) damage as measured by RBS to within 40 A(ring) and electrically active damage to within 200 A(ring) of the surface. This is a factor of 3–6 shallower than other RIE processes operated below 10 mT with comparable or higher bias voltages. Acceptor passivation of both InP and InGaAsP, arising from the association of hydrogen with Zn sites, occurs to a depth of 2000 A(ring) after RIE and causes a decrease in carrier concentration in this layer. The effect is reversed, however, by rapid thermal processing at temperatures between 350 and 500 °C.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 29 (1990), S. 5190-5196 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...