In:
Plasma Chemistry and Plasma Processing, Springer Science and Business Media LLC, Vol. 40, No. 3 ( 2020-05), p. 697-712
Abstract:
In this work, we report on the atomic layer deposition (ALD) of HfN x thin films by employing CpHf(NMe 2 ) 3 as the Hf(IV) precursor and Ar–H 2 plasma in combination with external RF substrate biasing as the co-reactant. Following up on our previous results based on an H 2 plasma and external RF substrate biasing, here we address the effect of ions with a larger mass and higher energy impinging on HfN x film surface during growth. We show that an increase in the average ion energy up to 304 eV leads to a very low electrical resistivity of 4.1 × 10 –4 Ωcm. This resistivity value is achieved for films as thin as ~ 35 nm, and it is an order of magnitude lower than the resistivity reported in literature for HfN x films grown by either CVD or ALD, while being comparable to the resistivity of PVD-grown HfN x films. From the extensive thin film characterization, we conclude that the impinging ions during the film growth lead to the very low electrical resistivity of HfN x films by suppressing the oxygen incorporation and in-grain nano-porosity in the films.
Type of Medium:
Online Resource
ISSN:
0272-4324
,
1572-8986
DOI:
10.1007/s11090-020-10079-x
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2020
detail.hit.zdb_id:
2018594-7
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