In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. SF ( 2023-06-01), p. SF1019-
Abstract:
In metalorganic vapor phase epitaxy of β -Ga 2 O 3 using triethylgallium (TEGa) and O 2 as precursors and Ar as the carrier gas, the gases directly above the substrate were sampled and analyzed by time-of-flight mass spectrometry. TEGa was found to decompose at 400 °C–600 °C via β -hydrogen elimination reaction to generate gaseous Ga, hydrocarbons (C 2 H 4 , C 2 H 2 , C 2 H 6 ), and H 2 . When β -Ga 2 O 3 was grown at temperatures greater than 1000 °C and with input VI/III ratios greater than 100, the hydrocarbons and H 2 were combusted and CO 2 and H 2 O were generated. The C and H impurity concentrations measured by secondary-ion mass spectrometry in the β -Ga 2 O 3 (010) homoepitaxial layer grown under these conditions were less than their respective background levels. Thus, to grow β -Ga 2 O 3 without C and H contamination, conditions that favor the complete combustion of hydrocarbons and H 2 generated by the decomposition of TEGa should be used.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/acc53c
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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