In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. 3 ( 2021-03-01), p. 035506-
Kurzfassung:
In this study, AlGaN/GaN high-electron-mobility transistors (HEMTs) were grown on a GaN template and GaN substrate under the same growth conditions. It was observed that, in the HEMT structure grown on the GaN substrate, mobility decreased because of an increase in the two-dimensional electron-gas (2DEG) density; the origin of these redundant electrons was studied. The 2DEG density decreased with decreasing temperature, this phenomenon closely related to unintentionally induced shallow donors with ionization energy calculated to be around 67.8 meV. After Ⅴ/Ⅲ ratio regulation, the 2DEG density returned to a normal level; this combined with photoluminescence, confirmed for the first time that the abnormal increase of 2DEG density in HEMT structure grown on the GaN substrate is associated with nitrogen vacancies. Therefore, increasing the Ⅴ/Ⅲ ratio is beneficial for obtaining higher mobility by returning the 2DEG density to a normal level.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abe341
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2021
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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