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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 711-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the ohmic behavior observed after annealing Au/n-GaAs {110} Schottky diodes was investigated by electron-beam-induced current (EBIC) measurements of diode plan views and cross sections, combined with standard scanning electron microscopy and transmission electron microscopy techniques. The large leakage currents responsible for this behavior arise at the periphery of the deposited gold films, where elongated gold crystallites which lie on the GaAs surface are observed after heat treatment. These crystallites are typically 2–5 μm long, 500–2000 A(ring) wide, and are crystallographically oriented along the GaAs [110] direction. EBIC imaging demonstrated that a space-charge region was present under the peripheral area showing the gold crystallites. Comparison of current collection as measured with EBIC between annealed and unannealed diodes shows a large reduction in current collection under and around the periphery of the annealed diodes. These data allow attribution of the ohmic behavior to a recombination current. Experiments done with overlapping Au evaporations show that recombination on the bare GaAs surface between the observed crystallites surrounding each annealed diode is the main component of this recombination current, and thus of the large leakage current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343543
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  • 2
    Electronic Resource
    Electronic Resource
    Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2006-2010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report we show that the application of a large voltage and current stress can significantly change the barrier height of a given metal (Ag,Al,Au,Pd,Cr)/GaAs(110) contact. These changes of barrier height depend on the metal used, the method of fabrication of the diode (air exposed or UHV cleaved), and the intensity and direction of the potential and current during the electrical aging. In particular, the air-exposed Ag diodes exhibit the largest change in the barrier height (∼85 meV) upon aging, while the UHV-cleaved Ag diodes do not exhibit a significant change. In the case of Au, both UHV-cleaved and air-exposed diodes show a small change (∼20 meV). The barrier heights of Pd, Al, and Cr air-exposed diodes do not exhibit an appreciable change upon aging (i.e., 〈10 meV). The changes in barrier height are found to have a very consistent and characteristic logarithmic dependence upon time. Once the electrical aging is stopped, the barrier height is found to recover to near the unaged value. The long time constant of the aging process, the ability of the barrier height to recover after aging, the long time constant of the recovery process, and the acceleration of the recovery process by illumination suggest that the changes in the barrier height which occur upon electrical aging are due to the creation and/or annihilation of deep level traps near the interface. We also report a systematic study of a comparison of barrier height determinations for Ag, Al, Au, Cr, and Pd diodes formed on air-exposed and UHV-cleaved GaAs(110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341178
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in N2. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100968
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky barrier instabilities due to contamination (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 145-147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1–2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode's barrier height to annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100351
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  • 5
    Electronic Resource
    Electronic Resource
    Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101229
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and electrical properties of TiN/GaAs Schottky contacts (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2160-2162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99564
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  • 7
    Electronic Resource
    Electronic Resource
    Soft x-ray emission from double-pulse laser-produced plasma (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1880-1884 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A frequency-doubled 2-GW Nd:glass laser with a small satellite pulse (1% of the main pulse) was used for investigations of the soft x-ray conversion efficiency in double-pulse irradiation of planar Cu targets. The separation of the two pulses was varied between ±1.3 ns, and the pulse duration between 45 and 800 ps. For the case of a prepulse, an enhancement of the soft x-ray emission by a factor of 2–3 was observed at pulse durations between 45 and 200 ps. A smaller increase was achieved for positive delays ("post-pulse''), and no improvement for 800-ps pulses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342923
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  • 8
    Electronic Resource
    Electronic Resource
    The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1414-1418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation of 60 keV boron into {100} silicon at medium beam currents (150 μA) was performed at 300–315 K over the dose range from 1 to 8×1016/cm2. Diffraction contrast and high-resolution phase contrast transmission electron microscopy (TEM) were used on plan-view and 90° cross-section samples to study the formation of a continuous amorphous layer as a function of increasing dose. Our TEM results show that, unlike implantation of Si with heavier ions where amorphization initially occurs at or around the projected range, the amorphization by high dose (〉5×1016/cm2) B+-implanted Si first occurs at and/or near the surface. It is proposed that the buildup of a high concentration of vacancies which inevitably occurs near the surface during high-dose B+ implantation is primarily responsible for the observed near-surface amorphization. Based on the results of this investigation and those available in the published literature, it appears that low temperature (slow recombination rate for point defects) and high beam current (high generation rate for point defects) implantation may result in the optimum conditions for amorphous layer formation with boron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341122
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  • 9
    Electronic Resource
    Electronic Resource
    Comparative x-ray spectroscopy of various-Z elements with wavelength calibration (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 273-276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray spectra in the 5–15 A(ring) spectral region are presented for various elements with atomic numbers between 9 and 82. Plasma was produced by irradiating plane targets with 1-J, 800-ps frequency-doubled Nd:glass laser pulses at λ=527 nm. The characteristics of the spectra can be varied from pronounced K- and L-shell line emitters (F to As) to nearly continuous x radiators such as W or Au.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340287
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced elimination of implantation damage upon exceeding the solid solubility (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4114-4117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of silicon wafers with Ga and P, under specific conditions, results in enhanced category-II (end of range) dislocation loop elimination after short thermal cycling. Comparison of these results with transmission electron microscopy studies of Si-, Ge-, As-, Al-, and Sb-implanted samples indicate that the enhanced elimination process occurs only when the peak of the impurity concentration exceeds the solid solubility of the impurity in silicon at the annealing temperature and the resulting precipitates are dissolving. The activation energy for enhanced elimination of these extrinsic catetory-II dislocation loops is shown to be 5±0.5 eV. It is proposed that vacancy emission by the dissolving precipitates is responsible for the enhanced elimination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339126
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