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  • 2020-2023  (10)
  • 2000-2004  (90)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5567-5569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The irreversibility lines of Pr-doped Br2Sr2Ca1−xPrxCu2Oy single crystals have been studied systematically. It was found that for the Pr-doped samples as compared with the undoped Bi2Sr2CaCu2Oy the effective superconducting area shrinks, the irreversibility line Birr decreases, and the anisotropic parameter γ increases strongly due to Pr doping. It is evident that the substitution of Pr for Ca in the system effectively reduces the hole concentration on CuO2 layers to the underdoped state and destroys the Josephson coupling of the two superconducting regions of adjacent CuO2 layers. The vortex depinning is responsible for the irreversibility and the displacement value for vortex depinning is similar to that for vortex lattice melting, but with different physical meaning. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 8-11 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering instability of an intense laser pulse in a plasma channel proceeds differently than in a homogeneous plasma: The growth rate is reduced and the scaling with the laser intensity modified. These differences, significant even for shallow plasma channels, arise because of the radial shear of the plasma frequency and the existence of the weakly damped hybrid (electrostatic/electromagnetic) modes of the radially inhomogeneous plasma. The interplay of these two effects produces double-peaked spectra for the direct forward scattering in a channel. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3067-3073 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on improved InAs/InAs1−xSbx heterostructure single quantum well emitters for the mid-infrared wavelength region. An InAlAs barrier layer has been incorporated into the active region of the structures for improved electron confinement. With room temperature pulsed power outputs of 140 μW at a wavelength of 4.3 μm, an improvement of more than a factor of 6 has been achieved compared to similar structures without the barrier layer. Magneto-electroluminescence measurements at 4 K reveal the presence of multiple subband transitions in the spectra. Based on a k⋅p model assuming a type-IIa band offset, these transitions are identified as (e1,hh1) and (e1,lh1). The observation of these multiple transitions is shown to be strong evidence for population inversion in the structures. © 2002 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1406-1410 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La0.67Ca0.33Mn1−xCuxO3 (x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance (CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The model not only qualitatively accounts for some main features related to the CMR effect, but also quantitatively agrees with the experimental observations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 22 (2004), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The Zermatt-Saas serpentinite complex is an integral member of the Penninic ophiolites of the Central Alps and represents the mantle part of the oceanic lithosphere of the Tethys. Metamorphic textures of the serpentinite preserve the complex mineralogical evolution from primary abyssal peridotite through ocean-floor hydration, subduction-related high-pressure overprint, meso-Alpine greenschist facies metamorphism, and late-stage hydrothermal alteration. The early ocean floor hydration of the spinel harzburgites is still visible in relic pseudomorphic bastite and locally preserved mesh textures. The primary serpentine minerals were completely replaced by antigorite. The stable assemblage in subduction-related mylonitic serpentinites is antigorite–olivine–magnetite ± diopside. The mid-Tertiary greenschist facies overprint is characterized by minor antigorite recrystallization. Textural and mineral composition data of this study prove that the hydrated mineral assemblages remained stable during high-pressure metamorphism of up to 2.5 GPa and 650 °C. The Zermatt-Saas serpentinites thus provide a well documented example for the lack of dehydration of a mantle fragment during subduction to 75 km depth.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3006-3010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the effect of annealing in reduced oxygen pressure on the electrical transport properties of (La1−xNdx)0.7Sr0.3MnO3 (x=0, 0.25, 0.5, 0.75, and 1) epitaxial thin films and bulk materials has been carried out. The epitaxial films grown by pulsed laser ablation were in situ annealed in an oxygen atmosphere of 2×10−6–760 Torr at 700 °C for 1 h. It is found that the electrical transport behavior of the epitaxial film is insensitive to the annealing pressure. A similar thermal treatment on the bulk materials at 5 mTorr oxygen ambient, however, caused a dramatic change in their resistivity-temperature dependence. Our results suggest that the annealing has a prominent effect on the properties of grain boundary, which plays an important role in determining the electrical transport behavior of polycrystalline manganites. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1173-1175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal and transverse ultrasonic velocities and attenuations, the transport and magnetic properties, as well as the structural changes of polycrystalline La0.25Ca0.75Mn0.93Cr0.07O3 have been studied systematically. A velocity minimum and an attenuation peak for both longitudinal and transverse waves occur around the temperature Tco of charge ordering transition accompanied by the structural change from a cubic to a tetragonal phase. Near temperature TN (where the c-axis length shows a maximum), the sharp decrease of velocities for both waves and the appearance of a longitudinal attenuation peak are attributed to the antiferromagnetic transition together with the anomalous change in c-axis length of the tetragonal phase. The simultaneous occurrence of the ultrasonic, lattice, charge ordering, magnetic, and transport anomalous characteristics indicates the strong electron–phonon and spin–phonon interactions in the system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3031-3033 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Partially coalesced GaN pyramidal structures are formed by metal-organic chemical vapor deposition using the epitaxial lateral overgrowth method. Spatially resolved optical characterization of these structures has been carried out using cathodoluminescence (CL) microscopy and spectroscopy. The coalesced region exhibits much stronger and more uniform luminescence than other regions of the sample. In addition, the emission from the coalesced region is blue-shifted, while that from the sidewalls is red-shifted, relative to broad area grown samples. The peak shift mechanism is discussed based on the CL temperature and power dependence and analysis of the confocal Raman scattering. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2572-2574 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and effective method is presented for producing light-emitting porous silicon (PSi). A thin (d〈10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. Depending on the type of metal deposited and Si doping type and doping level, PSi with different morphologies and light-emitting properties is produced. PSi production occurs on the time scale of seconds, without electrical current, in the dark, on both p- and n-type Si. Thin metal coatings facilitate the etching in HF and H2O2, and of the metals investigated, Pt yields the fastest etch rates and produces PSi with the most intense luminescence. A reaction scheme involving local coupling of redox reactions with the metal is proposed to explain the metal-assisted etching process. The observation that some metal remains on the PSi surface after etching raises the possibility of fabricating in situ PSi contacts. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2532-2534 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin film of 1,1-dicyano-2,2-(4-dimethylaminophenyl) ethylene (DDME) has been grown by a modified vacuum deposition. The films were characterized by Fourier transform infrared spectroscopy, transmission electron microscopy, and scanning tunneling microscopy (STM). Highly ordered parallel molecular stacks were repeatedly observed with STM under ambient conditions. The dc current–voltage (I–V) characteristics of device Au/DDME/Au were measured, and the film was found to possess good electrical bistability and electrochromic properties. Nanometer-scale recording was realized on the film by applying pulse voltage between the STM tip and substrate. The possible switching mechanism is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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