Keywords:
High pressure (Technology).
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (477 pages)
Edition:
1st ed.
ISBN:
9780080864532
Series Statement:
Issn Series
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=349681
DDC:
621.3/8152
Language:
English
Note:
Front Cover -- High Pressure in Semiconductor Physics II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Parallel Transport in Low-Dimensional Semiconductor Structures -- I. Introduction -- II. The Effect of Pressure -- III. Integer Quantum Hall Effect -- IV. Fractional Quantum Hall Effect -- V. Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28Ga0.72As, Ga0 47 In0.53As/Al0.48In0.48In0.52, and in Ga0.47In0.53As/InP Heterojunctions -- Acknowledgments -- References -- Chapter 2. Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures -- I. Introduction -- II. Theory and Calculation -- III. Experimental Techniques -- IV. High Pressure Studies of Negative Differential Resistance -- V. Concluding Remarks -- Acknowledgments -- References -- Chapter 3. Phonons, Strains, and Pressure in Semiconductors -- I. Introduction -- II. Background -- III. Effects of Hydrostatic Pressure on Optical Phonons -- IV. Effects of Strains on Optical Phonons -- V. Strain Characterization of Heterojunctions and Superlattices -- VI. Concluding Remarks -- Acknowledgments -- Appendix -- References -- Chapter 4. Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures -- I. Introduction -- II. Effects of Homogeneous Deformation on Electronic Energy Levels -- III. Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors -- IV. Piezo-Optical Response of Ge and GaAs in the Opaque Region -- V. Intrinsic Piezobirefringence in the Transparent Region -- VI. Effects of External Stress on Quantum States -- V. Summary -- VI. Acknowledgments -- References -- Chapter 5. Semiconductor Optoelectronic Devices -- I. Introduction -- II. Experimental Considerations -- III. Semiconductor Lasers.
,
IV. Uniaxial Strain Effects: Strained-Layer Lasers -- V. Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization -- VI. Summary -- Acknowledgments -- References -- Chapter 6. The Application of High Nitrogen Pressure in the Physics and Technology of III-N Compounds -- I. Introduction -- II. Thermal Stability of AIN, GaN, and InN -- III. Solubility of N in Liquid Al, Ga, and In -- IV. Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and In -- V. High N2 Pressure Solution Growth of GaN -- VI. Physical Properties of Pressure-Grown GaN Crystals -- VII. Wet Etching and Surface Preparation -- VIII. Homoepitaxy -- IX. Conclusions -- Acknowledgments -- References -- Chapter 7. Diamond Anvil Cells in High Pressure Studies of Semiconductors -- I. DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure -- II. Condensed Matter Physics Techniques Coupled to a DAC -- III. High Pressure Studies of Semiconductors -- IV. Concluding Remarks -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.
Permalink