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  • American Institute of Physics (AIP)  (1)
  • Nature Publishing Group (NPG)  (1)
  • American Physical Society (APS)
  • 2010-2014  (2)
  • 2014  (2)
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  • 2010-2014  (2)
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  • 1
    Publication Date: 2014-07-22
    Description: A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc ~ 1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor. Scientific Reports 4 doi: 10.1038/srep05709
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
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  • 2
    Publication Date: 2014-09-16
    Description: Both direct current (DC) and alternating current (AC) driving electroluminescence were obtained from isotype heterojunction ( n-i-n : n-ZnO/i-HfO 2 /n-GaN) light-emitting diodes (LEDs) fabricated by a pulsed laser deposition system. The n-ZnO film maintained the same growth orientation as the n-GaN film and was of high crystalline quality even on a polycrystalline high- k HfO 2 thin film. The as-produced n-i-n LEDs can emit strong visible light or dominant ultraviolet light at ∼392 nm, depending on the polarity of the applied DC voltages. The individual spectrum under either forward or reverse bias can be integrated to one spectrum by applying 50 Hz AC driving voltages (sinusoidal signals). More importantly, near white-light can be obtained by tuning the symmetric driving AC sinusoidal signals to the asymmetric ones. This simple and facile method only by applying AC asymmetric signals to achieve white light emission on one single chip may provide an easy route for the white-light solid-state lighting industry.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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