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  • Articles  (2)
  • 2015-2019
  • 2010-2014  (2)
  • 2014  (2)
  • Physics  (2)
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  • Articles  (2)
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  • 2015-2019
  • 2010-2014  (2)
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  • 1
    Publication Date: 2014-08-13
    Description: P-n junction BiOBr/ZnO composites were prepared by a facile solvothermal process with double Br sources of CTAB and KBr. The samples were characterized by XRD, XPS, SEM, TEM, HRTEM, DRS, BET and PL. The BiOBr/ZnO composites exhibited much higher photocatalytic activity than single BiOBr and ZnO for the degradation of phenol under simulated sunlight irradiation. The enhanced photocatalytic activity of BiOBr/ZnO composites could be mainly ascribed to the high-efficiency separation of photogenerated electron-hole pairs through BiOBr/ZnO p-n junction. The reaction mechanism for the removal of phenol was also discussed. Hole and ·OH were the main reactive species. Moreover, the influence of disparate ratios of double Br sources to BiOBr/ZnO composites was also investigated. The results indicated that the BiOBr/ZnO composites prepared by double Br sources showed better photocatalytic activities than the sample prepared by single Br source. P-n junction BiOBr/ZnO composites were prepared by a facile solvothermal process with double Br sources and the composites exhibited higher photocatalytic activity than BiOBr and ZnO for the degradation of phenol, which could be ascribed to two reasons. One reason may be the high efficient separation of photogenerated electron-hole pairs through BiOBr/ZnO p-n junction. Another one would be the high surface area achieved by adjusting the content of CTAB.
    Print ISSN: 0232-1300
    Electronic ISSN: 1521-4079
    Topics: Geosciences , Physics
    Published by Wiley-Blackwell
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  • 2
    Publication Date: 2014-09-16
    Description: Both direct current (DC) and alternating current (AC) driving electroluminescence were obtained from isotype heterojunction ( n-i-n : n-ZnO/i-HfO 2 /n-GaN) light-emitting diodes (LEDs) fabricated by a pulsed laser deposition system. The n-ZnO film maintained the same growth orientation as the n-GaN film and was of high crystalline quality even on a polycrystalline high- k HfO 2 thin film. The as-produced n-i-n LEDs can emit strong visible light or dominant ultraviolet light at ∼392 nm, depending on the polarity of the applied DC voltages. The individual spectrum under either forward or reverse bias can be integrated to one spectrum by applying 50 Hz AC driving voltages (sinusoidal signals). More importantly, near white-light can be obtained by tuning the symmetric driving AC sinusoidal signals to the asymmetric ones. This simple and facile method only by applying AC asymmetric signals to achieve white light emission on one single chip may provide an easy route for the white-light solid-state lighting industry.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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