In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 19, No. 4 ( 2004-04), p. 1105-1117
Kurzfassung:
An n -type Ga 2 O 3 semiconductor thin film was prepared by rheotaxial growth and thermal oxidation (RGTO) method on SiO 2 and Al 2 O 3 substrates. Multilayer growth technique was used to control grain size. The morphology and the electrical properties of the Ga and Ga 2 O 3 films were measured as functions of thickness, temperature, and Ti dopant concentration. Measurements of the sensitivity, the response time, and the recovery time of the Ga 2 O 3 films in response to ethanol and CO were carried out.The results showed that the grain size of Ga film increased with thickness, and a balls-on-ball type morphology was produced as the film exceeded 3000 Å. Ga 2 O 3 nanowires were created when Ga films were oxidized under impure O 2 atmosphere. Ga 2 O 3 films had an optimum sensing temperature increasing from 625 °C for a5012 Å film to 675 °C for a 5.6-μm film. The films prepared by multilayer growth technique had smaller grain size, but the sensitivity remained unchanged. The films deposited on SiO 2 substrate had a sensitivity higher by 28% than that on Al 2 O 3 . Doping of 0.28 at.% Ti enhanced nanowires growth, raised sensitivity by 6%, shortened response time from 40 to 30 s, but prolonged recovery time from 92 to130 s. Formation of nanowires resulted in an increase of sensitivity up to 50%.Doping of 2.18 at.% Ti led to the formation of nanoribbons with a sensitivity lowerby 8% and a recovery time shortened from 130 to 72 s. The RGTO method was shown to produce Ga 2 O 3 gas-sensitive thin film with good reproducibility.
Materialart:
Online-Ressource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.2004.0144
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2004
ZDB Id:
54876-5
ZDB Id:
2015297-8
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