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  • 2000-2004  (5)
  • 2001  (5)
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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Further developments in an ac-based capacitance tomography system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3902-3907 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ac-based electrical capacitance tomography (ECT) system has been developed at UMIST, with sinusoidal excitation and phase-sensitive demodulation (PSD). In this article the overall system design is briefly described and then discussed in detail are the key design features, needed to achieve a high signal-to-noise ratio and a high data acquisition rate, including transient process analysis of the first stage, design of an analog Butterworth low-pass filter and optimization of the data acquisition process. The experiments show that the ac-based system has signal variance 19 times better than the previous design, the charge/discharge ECT system, and that a data acquisition rate of 140 frames per second is achieved for a 12-electrode system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403012
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  • 2
    Electronic Resource
    Electronic Resource
    White microbeam diffraction from distorted crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a general description of white-beam (Laue) scattering from grains with dislocations. This approach is applied to examples with equal numbers of positive and negative Burger's vectors (paired) and with unpaired dislocations of one sign (geometrically necessary). We find that streaking of the Laue reflections is sensitive to both long-range geometrical rotations introduced by unpaired edge dislocations and to local rotation fluctuations introduced by the total number of dislocations (paired and unpaired). We demonstrate the technique by analyzing the dislocation distribution in a nanoindented Cu single crystal. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389321
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of perimeters of induced shielding current loops on levitation force in melt grown single-domain YBa2Cu3O7−x bulk (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of perimeters of induced shielding current loops (ISCL) on a levitation force have been investigated for a single-domain YBa2Cu3O7−x sample. The sample was prepared by a top-seeded melt–growth process. The levitation force of the sample decreases monotonously with the increasing perimeters of ISCL while the depth of the cutting slot increases along its diameter from one side to another. The maximum levitation force of the sample without any cutting slot is about 1.68 times higher than that of the sample bisected. A simple physical model is afforded to interpret the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404999
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  • 4
    Electronic Resource
    Electronic Resource
    Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368378
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular mapping of a new gene for resistance to frogeye leaf spot of soya bean in ‘Peking’ (2001)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 120 (2001), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Amplified fragment length polymorphism (AFLP) and microsatellite (simple sequence repeat, SSR) techniques were used to map the _RGSpeking gene, which is resistant to most isolates of Cercospora sojina in the soya bean cultivar ‘Peking’. The mapping was conducted using a defined F2 population derived from the cross of ‘Peking’(resistant) בLee’(susceptible). Of 64 EcoRI and MseI primer combinations, 30 produced polymorphisms between the two parents. The F2 population, consisting of 116 individuals, was screened with the 30 AFLP primer pairs and three mapped SSR markers to detect markers possibly linked to RcsPeking. One AFLP marker amplified by primer pair E-AAC/M-CTA and one SSR marker Satt244 were identified to be linked to ResPeking. The gene was located within a 2.1-cM interval between markers AACCTA178 and Satt244, 1.1 cM from Satt244 and 1.0 cM from AACCTA178. Since the SSR markers Satt244 and Satt431 have been mapped to molecular linkage group (LG) J of soya bean, the ResPeking resistance gene was putatively located on the LG J. This will provide soya bean breeders an opportunity to use these markers for marker-assisted selection for frogeye leaf spot resistance in soya bean.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2001.00563.x
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