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  • 2000-2004  (4)
  • 1990-1994
  • 2001  (4)
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  • 2000-2004  (4)
  • 1990-1994
Year
  • 1
    Electronic Resource
    Electronic Resource
    Control of magnetic properties in LaCrO3–LaFeO3 artificial superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2847-2851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of LaFeO3–LaCrO3 superlattices have been artificially controlled by adjusting the atomic order of the B site ions via changes of the stacking direction of the 〈100〉, 〈110〉 and 〈111〉 planes and adjustment of the stacking periodicity. When Fe and Cr layers are atomically stacked along the 〈111〉 direction, ferromagnetism appears. In the case of superlattices growing along the 〈100〉 and 〈110〉 directions, antiferromagnetic properties appear, and the Néel temperature changes systematically as the stacking periodicity increases. Although the total number of Fe and Cr ions are the same in the (100), (110) and (111) stacking planes, different magnetic properties can be created in artificial superlattices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327287
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic and electric properties of transition-metal-doped ZnO films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 988-990 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 3d-transition-metal-doped ZnO films (n-type Zn1−xMxO (x=0.05–0.25): M=Co, Mn, Cr, Ni) are formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties are examined. The Co-doped ZnO films showed the maximum solubility limit. Some of the Co-doped ZnO films exhibit ferromagnetic behaviors with the Curie temperature higher than room temperature. The magnetic properties of Co-doped ZnO films depend on the concentration of Co ions and carriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384478
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  • 3
    Electronic Resource
    Electronic Resource
    Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2767-2769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline Sr1−xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tconset=41.5 K and Tczero=39.0 K, which is close to the highest Tconset of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ cm just above Tc. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410872
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  • 4
    Electronic Resource
    Electronic Resource
    As-grown superconducting MgB2 thin films prepared by molecular beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2046-2048 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of magnesium diboride (MgB2) were prepared on various substrates [SrTiO3 (001), sapphire R, sapphire C and Si (111)] by molecular beam epitaxy. The growth temperature was examined in the ambient to 650 °C. Only films formed at temperatures between 150 and 320 °C showed superconductivity. The best TConset of 36 K with a sharp transition width of ∼1 K was observed. The TC of the as-grown superconducting MgB2 thin films is close to the bulk value. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405421
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