In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 14, No. 5 ( 1996-09-01), p. 3316-3320
Abstract:
A new theory for oxidation of silicon is derived which is based upon diffusion of molecular oxygen in stoichiometric silicon dioxide, consistent with the mass balance at the silicon-silicon dioxide phase interface. The results are compared with the experimental data of Lie et al. and Adams et al.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1996
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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