In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 6S ( 1996-06-01), p. 3710-
Abstract:
The first-principles calculations for the electronic structure of the aluminum
tip and the silicon surface in scanning tunneling microscopy are performed using the recursion-transfer matrix method, which is an effective method for
exploring the microscopic electronic states of a bielectrode system under electric field and current.
The atomic-scale current distribution and the potential barrier between the tip and the surface are presented. It is revealed that
the opening of a hole in the potential barrier occurs when the tip-sample distance is 10 a.u. at a surface bias of +2.0 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.3710
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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