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  • American Institute of Physics (AIP)  (5)
  • 1995-1999  (5)
  • 1995  (5)
Document type
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Years
  • 1995-1999  (5)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of the electromechanical response and polarization of electric field biased ferroelectrics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2549-2555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromechanical and dielectric responses of ferroelectric materials near paraelectric–ferroelectric (PF) phase transitions are examined both experimentally and theoretically. It is shown that the type of PF transition, i.e., first order and continuous transitions, and diffused phase transition found in relaxor ferroelectrics, has marked effect on the electromechanical and dielectric response behavior for materials under electric field bias. It is demonstrated that an exceptionally large piezoelectric and electromechanical response can be achieved in materials with a first order PF transition. For example, in Ba1−xSrxTiO3 (x∼0.35) ceramics at room temperature, a piezoelectric d33 larger than 1500 pm/V with very little frequency dispersion can be obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358785
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  • 2
    Electronic Resource
    Electronic Resource
    Study of band-gap narrowing effect and nonradiative recombination centers for heavily C-doped GaAs by photoluminescence spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4822-4824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band-gap narrowing effect of GaAs as a function of carbon doping concentration has been measured using photoluminescence (PL) spectroscopy on samples grown by metalorganic chemical-vapor deposition. The range of carbon concentration varies from 3.4×1018 to 1.1×1020 cm−3. The experimental results obtained from PL spectra taking tailing effects into account are in good agreement with recent theoretical calculations. The intensity of PL spectra decreases rapidly when the free-carrier concentration is higher than about 4×1019 cm−3. This phenomenon cannot be explained with only the varying tendency of the minority-electron lifetime of the radiative recombination process, indicating the introduction of additional nonradiative recombination centers in heavily C-doped GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359406
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  • 3
    Electronic Resource
    Electronic Resource
    Dynamic behavior of periodic piezoceramic-polymer composite plates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3093-3095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behaviors of periodic piezoceramic-polymer composite plates, especially the effect of the finite thickness on the strain distributions and resonant modes, are studied theoretically. It is found that as long as fL1〈ft1, where fL1 and ft1are the thickness and first piezoelectric active stop band-edge mode frequencies, there exists a frequency f1 near fL1at which the polymer and ceramic vibrate in phase with equal amplitude in the x3 direction. The effect of the thickness of a composite plate is to change the bandwidth in which the two vibrate in unison. It is also found that due to the finite thickness effect a series of piezoelectric active modes at frequencies near and above ft1may be excited. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114875
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  • 4
    Electronic Resource
    Electronic Resource
    Preannealing effects on carrier concentration profile after Au diffusion in Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 854-856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After Au diffusion, carrier concentration profiles in low O (float zoned), lightly doped, p-type Si were found to be a function of heat treatment received by the Si crystal prior to Au deposition. We interpret anomolous carrier concentration profiles in terms of vacancy diffusion and clusters of excess vacancies retained from the crystal growth processing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113409
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  • 5
    Electronic Resource
    Electronic Resource
    The phase transition and transport properties of Sr0.56C60O1.5 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3417-3419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and dielectric measurement have been applied to investigate the phase transition and transport properties of Sr0.56C60O1.5 which is obtained by the reaction of SrCl2 with C60 anion aquatic solution. The new compound has a similar structure, but different transport properties as compared with metallic Sr-doped C60. X-ray diffraction shows that a first-order phase transition around 100 °C is related to the rearrangement of Sr2+ in the interstitial sites of the C60 lattice. The step change of ac conductivity near 100 °C is also attributed to the hopping of Sr2+ between interstitial sites. The ionic conductivity indicates the possibility of synthesizing superionic conductors based on C60 and its derivatives. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115265
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