In:
Applied Physics Letters, AIP Publishing, Vol. 66, No. 20 ( 1995-05-15), p. 2643-2645
Abstract:
Highly (100)-oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As-deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol-gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO-coated substrate was also found to have a significant (100)- and (001)-oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1995
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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