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Mechanisms of epitaxial CoSi2 formation in the multilayer Co/Ti-Si(100) system (1994)

Hong, Feng ; Rozgonyi, George A. ; Patnaik, Bijoy K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2241-2243

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We describe how the unique growth environment provided by a multilayer Co/Ti(O)-Si structure leads to the formation of epitaxial CoSi2/Si(100). A key factor is the preferential nucleation of (311) CoSi which is the dominant phase from 650 to 800 °C in this multilayer system. Epitaxial CoSi2 then nucleates at the (311) CoSi/(100) Si interface and grows during a 900 °C second annealing. Having Ti as the first layer in contact with the Si substrate reduces the native Si oxide and residual impurities. The amorphous Ti(O) provides a uniform supply of slowly diffusing Co that promotes preferential CoSi formation. The upper Co and Ti layers serve to stabilize the reaction and suppress agglomeration.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111657

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