In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 297 ( 1993-01-01)
Abstract:
A total-area conversion efficiency of 12.0% (100cm 2 ) has been achieved for a single-junction a-Si solar cell. The film deposition rate (R d ) plays an essential role in controlling the optical and electrical properties of "device-quality" a-Si:H for high-efficiency solar cells. The properties of conventional "device-quality" a-Si:H films deposited from 100% SiH 4 are primarily determined by the balance between T s and R d . A lower or higher deposition rate results in a-Si:H with a narrower or wider bandgap, respectively. This enables the properties of a-Si:H to be controlled independent of T s . The controllable range of a-Si:H properties can be widened by effectively utilizing factors such as ion bombardment. For example, a high dilution of SiH 4 with H 2 ( H 2 SiH 4 = 10 or more) or an H 2 plasma treatment after deposition results in a-Si:H with a very wide bandgap and low defect density, which cannot be achieved by using 100% SiH 4 - Controlling the properties of a-Si:H by applying vibrational / rotational energy is also investigated.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-297-779
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1993
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