In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12B ( 1993-12-01), p. L1852-
Abstract:
Using reproducible and controllable contact electrification, we studied the charge dissipation of densely deposited electrons on a thin silicon oxide surface by electrostatic force measurement using a modified atomic force microscope. As a result, by increasing the density of contact-electrified electrons, we observed an appearance of a stable state of the contact-electrified electrons and its disappearance due to charge dissipation, i.e., a kind of stable-unstable phase transition. We also observed saturation of the deposited electron density with the spatial spread of deposited electrons.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1852
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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